PAM XIAMEN offers LaAlO3 single crystal.
LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well [...]
2019-05-07meta-author
PAM XIAMEN offers Gallium Phosphate GaP Crystal and Substrate.
Main Parameters
Crystal structure
Cubic
Growth method
crystallization process
Crystal lattice parameters
a=5.642Å
Density
2.16（g/cm3）
Wave band
0.25~22.00um
Index of refraction
1.54427
T
0.9
Nf
0.0127
Surface roughness
<30A
orientation
<111>, <110>, <100>
size
10×10×2.0mm, 20*20*2.0mm, other sizes available upon request
polished
One side or double
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-12meta-author
PAM XIAMEN offers YSZ crystal.
YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter.
YSZ Substrate (110)
YSZ (110) 0.5″x0.5″x0.5mm, 1SP
YSZ (110) 0.5″x0.5″x0.5mm, [...]
2019-05-21meta-author
Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy
We have carried out area-selective epitaxy of GaAs microdisk structures on a SiO2-masked GaAs substrate by migration-enhanced epitaxy. We have successfully grown “damage-free” disks at 590 °C. It is found that, for the [...]
2018-09-20meta-author
PAM XIAMEN offers 150-μm-gapped THz photoconductive antenna.
The types of terahertz photoconductive antennas prepared includes diope antenna,strip line antenna, bow-tie antenna and antenna array with different parameters. The antenna gaps are from 2 μm to 1 mm, and we also can make the antennas designed [...]
2019-03-07meta-author
In the production process of single crystal silicon, impurities such as carbon and oxygen are inevitably introduced due to factors such as raw materials and methods, which directly affect the performance of single crystal silicon. For example, the annealed silicon wafer supplied by us, [...]
2022-06-29meta-author
![$[000\bar{1}]$](https://cdn.iopscience.com/images/1347-4065/57/4S/04FG01/SS17023if001.gif)
. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm−3) and carbon (>1016 cm−3) impurities. The residual carbon and oxygen impurities decreased to <1016 cm−3 when the off-angle of the m-plane GaN substrate was increased. The leakage current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.