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8 "Silicon Wafer-2

PAM XIAMEN offers 8″ Silicon Wafer 8″ Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Chamfer width 700-1000 μm Orientation – (100)±0.5 single sided polishing For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor [...]

2019-09-03 Baca lebih lanjut ...

6 "FZ Silicon Wafer-4

PAM XIAMEN offers 6″ FZ Silicon Wafer Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on the back side: all none, SEMI [...]

2019-09-03 Baca lebih lanjut ...

Germanium Boleh Ambil Transistor mana Silicon Tidak boleh

Germanium was an early transistor material. Now its charge-carrying abilities and advanced fabrication technology make it an attractive material for future chips. As a proof of concept, our team used germanium-on-insulator wafers to construct inverters containing first planar transistors and then FinFETs  Germanium was first isolated and identified by the [...]

2019-08-28 Baca lebih lanjut ...

FZ Intrinsic wafer Silicon undoped

PAM XIAMEN offers FZ Intrinsic undoped Silicon wafers. Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]

2019-08-22 Baca lebih lanjut ...

3 "FZ Silicon Wafer Ketebalan: 229-249μm -2

PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness：229-249μm. 3″ Si FZ Diameter 76-76.6mm Thickness 229-249μm Resistivity 53-60Ωcm TTV ≤10μm RRG ≤ 7% front and back sides acid etched about 1.5mil is etched from the surfaces in order to remove any surface damage 1.5mil = 1.5*25.4= 38.1μm 1.1 Wafers are to [...]

2019-08-22 Baca lebih lanjut ...

3 "FZ Silicon Wafer Ketebalan: 229-249μm -1

PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness：229-249μm. 3″ Si FZ Diameter 76-76.6mm Thickness 229-249μm Resistivity 39-47Ωcm TTV ≤10μm RRG ≤ 7% about 1.5mil is etched from the surfaces in order to remove any surface damage 1.5mil = 1.5*25.4= 38.1μm 1.1 Wafers are to be cut from phosphorus doped N [...]

2019-08-22 Baca lebih lanjut ...

3 "Si wafer Ketebalan: 380 ± 20μm

PAM XIAMEN offers 3″ Si wafer Thickness: 380±20μm. 3″ Si wafer with Thermal Oxide of thickness 1000A Diameter: 3″ Diameter: 76.2±0.3mm Thickness: 380±20μm Orientation: <100>±1° Type/dopant: N type/Phosphorus Resistivity: 1-20Ωcm Polishing: SSP Primary Flat 22.5±2.5mm, （110）±1° Surface roughness: <5A For more information, please visit our website: https://www.powerwaywafer.com, send us [...]

2019-08-22 Baca lebih lanjut ...

3 "Dummy gred silikon wafer Ketebalan: 340-380μm

PAM XIAMEN offers 3″ Dummy grade silicon wafer Thickness:340-380μm. 3″ Dummy grade / Mechanical Grade silicon wafer, SSP. MUST be Single Side Polished and Single Crystal Silicon. Thickness 340-380μm, no scratch, no films, no etch patterns or residues For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

2019-08-22 Baca lebih lanjut ...

4 "Si wafer Ketebalan: 500 ± 20μm

PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm. 4″ Si wafer 4″ Si, N-type, <100>, SSP resistivity3000-4000Ωcm thickness500±20μm carrier lifetime>1ms(1000μm) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of [...]

2019-08-22 Baca lebih lanjut ...

Si wafer Thickness: 675 ± 25 um

PAM XIAMEN offers Si wafer Thickness: 675 ± 25 um. Si wafer Method: Cz Orientation: <111> Type: P-Type Dopant: Boron Resistivity: 0.1-13 ohm.cm Diameter: 150 ± 0.1 mm Thickness: 675 ± 25 um Chamfer Front side: Epi-ready Back side: etched BOW < 30um Warp < 30um For more information, [...]

2019-08-22 Baca lebih lanjut ...