The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]
2019-12-23meta-author
Will the Novel Coronavirus-caused Pneumonia affect the company Resumption?
Post by PAM-XIAMEN, Feb.11,2020
The novel coronavirus-caused pneumonia affect the company resumption in short term, but not too much, as currently the epidemic is under control well by quarantine measures. Currently the reworking rate is >=75%, estimate [...]
2020-02-11meta-author
PAM XIAMEN offers 4″ FZ silicon ignot.
Silicon ingot, per SEMI, G 100.7±0.3mmØ,
FZ Intrinsic undoped Si:-[111]±2.0°, Ro > 25,000 Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-02meta-author
Xiamen Powerway offers InSb (indium antimonide) epi wafer with homogeneous structure, which can be used to detect infrared radiation with a wavelength of 8~12um. Homoepitaxial InSb epi wafer on InSb substrate can improve the operating temperature of indium antimonide detector.
InSb epi ready wafer
1. InSb Homogeneous Structures
1.1 [...]
2020-03-25meta-author
Layer structure of 703nm Laser
We can offer Layer structure of 703nm Laser as follows:
Layer
Composition
Thickness (um)
Doping(cm-3)
Cap
P+- GaAs
0.2
Zn:>1e19
Cladding
p – Al0.8Ga0.2As
1
Zn:1e18
Etch stop
GaInP
0.008
Zn:1e18
Top barrier
Al0.45Ga0.55As
0.09
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Bottom barrier
Al0.45Ga0.55As
0.09
Undoped
Cladding
n – Al0.8Ga0.2As
1.4
Si:1e18
Buffer
n – GaAs
0.5
Si:1e18
Substrate
n+ – GaAs
S :>1e18
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
PAM XIAMEN supply InAs wafer up to 2″” diameter.
InAs <100> doped
InAs (100), P Type, Zn doped 10×10 x 0.5 mm, one side polished
InAs (100), P Type, Zn doped 5×5 x 0.5 mm, one side polished
InAs (100), S-doped 2″ dia x 0.5 [...]
2019-05-06meta-author