Substrat GaAs jenis P

Substrat GaAs jenis P

PAM-XIAMEN boleh menawarkan substrat GaAs jenis P 2 & 3 inci.galium arsenida(GaAs) adalah semikonduktor jurang jalur langsung jenis III-V dengan struktur kristal campuran zink, dan dopan jenis pA GaAs biasanya digunakan sebagai substrat untuk pertumbuhan epitaksial semikonduktor III-V lain, termasuk indium gallium arsenide, aluminium gallium arsenide , dll. Parameter ditunjukkan dalam jadual di bawah:

1. Spesifikasi substrat GaAs p-jenis 2 inci

PAM-190308-GAAS

parameter Keperluan Pelanggan Nilai Dijamin / Sebenar UOM
Kaedah Pertumbuhan: VGF VGF
Jenis Kelakuan: SCP SCP
Dopant: GaAs-Zn GaAs-Zn
Diameter: 50.8 ± 0.4 50.8 ± 0.4 mm
Orientasi: (100) 0 ° ± 0.5 ° (100) 0 ° ± 0.5 °
Lokasi / panjang: EJ [0-1-1] ± 0,5 ° / 16 ± 1 EJ | 0-1-1] ± 0.5 ° / 16 ± 1
Lokasi / panjang lF: EJ [0-11] ± 0.5 ° / 7 ± 1 EJ [0-11] ± 0.5 ° / 7 ± 1
lngot CC: Min: 1E19 Maks: 5E19 Min: 1.5E19 Maks: 2.0E19 / cm
Ketahanan: NA NA Ohm.cm
Mobiliti: NIA NA cm2/ lwn
EPD: Maks: 5000 Min: 900 Maks: 1100 / cm2
Ketebalan: 350 ± 25 350 ± 25 mikron
TTV: Maks: 10 Maks: 10 mikron
TIR: Maks: 10 Maks: 10 mikron
Maksimum: Maks: 10 Maks: 10 mikron
Meledingkan: Maks: 10 Maks: 10 mikron
Permukaan-Selesai depan: Digilap Polisbed
Permukaan-Selesai-belakang: Terukir Terukir
Sedia Epi: Ya Ya

 

2. Spesifikasi substrat GaAs p-jenis 3 inci

PAM-190315-GAAS

Sr No. parameter Spesifikasi
1. Jenis semikonduktor p-type (Zn atau C doped),
VGF berkembang
2. diameter 76.2 +/- 0.5 mm
3. orientasi (100) ± 0.1 ° (mungkin atau mungkin tidak 2 darjah)
4. ketebalan 500 ± 25um
5. Ketumpatan pembawa 0.5 hingga 5x 10E19 / cc
6. Rintangan Helaian yang sepadan Ohm / petak
7. EPD ≤5000 cm2
8. Flat Utama kami (0-1-1) ± 0.2 darjah / EJ
9. Panjang Flat Utama 22 ± 2mm
10. Panjang Rata Kecil 11 ± 2mm
11. Toleransi Orientasi rata ± 0.02 darjah
12. Kemasan permukaan Digilap sebelah
13. laser Mark Permukaan belakang di sepanjang flat utama
14. Pembungkusan Dikemas secara individu dalam suasana lengai
15. Laporan ujian Ya

 

Selepas Si, GaAs adalah jenis bahan semikonduktor baru dengan penyelidikan terdalam dan paling banyak digunakan. Ia mempunyai ciri-ciri mobiliti tinggi, lebar jalur terlarang yang besar dan ketahanan suhu tinggi. Substrat GaAs kekonduksian jenis-p digunakan terutamanya dalam bidang komunikasi frekuensi tinggi, rangkaian tanpa wayar dan optoelektronik. Dengan pengembangan teknologi proses p-jenis gaas ohmic contact, substrat gallium arsenide yang dihasilkan semakin besar, dengan ketepatan geometri yang tinggi dan kualiti permukaan yang tinggi.

Untuk maklumat lebih lanjut, sila hubungi kami melalui e-mel di victorchan@powerwaywafer.com dan powerwaymaterial@gmail.com.

2021-04-15

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