PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers6″ FZ Silicon Wafer-5 Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on [...]
PAM XIAMEN offers 6″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:As [100] 6″ 675 OxP/EOx 0.001-0.005 SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick p-type Si:B [100] 6″ 735 P/P FZ >50 Prime, TTV<2μm p-type Si:B [100] 6″ 650 P/P FZ 8-13 SEMI Prime (57.5mm) n-type Si:P [100] 6″ 475 P/P FZ 60-75 SEMI Prime, MCC Lifetime>14,980μs, Lasermark n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 800 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 950 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs Intrinsic Si:- [100] 6″ 675 P/P FZ >10,000 SEMI Prime (57.5mm) Intrinsic Si:- [100] 6″ 675 P/P FZ >10,000 SEMI [...]
Epitaxial InGaAsP / InP photodiode wafer is offered for making InP-based optoelectronic devices. For such devices, InGaAsP quaternary material is commonly grown on InP substrate as ohmic contact layers. Quaternary InGaAsP thin film epitaxial on InP is sensitive to InP luminescence. InGaAsP / InP [...]
PAM-XIAMEN is available to offer P-type SiC substrates, please refer to: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. The p-type substrate prepared by liquid-phase method can be applied to prepare IGBT devices and bipolar devices, solving the problem of missing p-type substrates in the SiC industry. At present, significant breakthroughs have been made in [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50 n- Si:P 36±4 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 5.4±0.7 N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 60±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 70±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5 p- Si:B 15±10% P/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 6±0.9 P/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38 p- [...]
Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted [...]
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