Silicon Wafer

PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer, CZ wafer, epitaxial wafer, polished wafer, etching wafer.

The silicon wafer manufacturing process is crystal pulling, dicing, grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, wafer polishing and inspection are the core links of Si wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal Si wafer growth, and Si wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.

  • 12 "Perdana Gred Silicon Wafer

    PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.

  • 12 "Silicon wafer 300mm TOX (Si Thermal Oxidation Wafer)

    PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • 12 "Ujian Gred Silicon Wafer

    PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.

  • Terapung-Zone Mono-Kristal Silicon

    PAM-XIAMEN dapat menawarkan wafer silikon zon terapung, yang diperoleh dengan kaedah Float Zone. Batang silikon monokristalin dapat dicapai melalui pertumbuhan zon apungan, dan kemudian memproses batang silikon monokristalin menjadi wafer silikon, yang disebut wafer silikon zon apungan. Oleh kerana wafer silikon cair zon tidak bersentuhan dengan pelindung kuarza semasa proses silikon zon terapung, bahan silikon berada dalam keadaan terampai. Oleh itu, ia kurang tercemar semasa proses peleburan silikon zon terapung. Kandungan karbon dan oksigen lebih rendah, kekotoran lebih sedikit, dan daya tahan lebih tinggi. Ia sesuai untuk pembuatan peranti kuasa dan alat elektronik voltan tinggi tertentu.

  • Ujian Wafer Monitor Wafer Dummy Wafer

    Sebagai pengeluar wafer dummy, PAM-XIAMEN menawarkan wafer dummy silikon / wafer ujian / wafer monitor, yang digunakan dalam alat produksi untuk meningkatkan keselamatan pada awal proses pengeluaran dan digunakan untuk pemeriksaan penghantaran dan penilaian bentuk proses. Oleh kerana wafer silikon palsu sering digunakan untuk eksperimen dan ujian, ukuran dan ketebalannya adalah faktor penting dalam kebanyakan keadaan. Wafer dummy 100mm, 150mm, 200mm, atau 300mm ada.

  • Cz Mono-Kristal Silicon

    PAM-XIAMEN, pengeluar silikon pukal monokristalin, dapat menawarkan wafer silikon monokristal <100>, <110> dan <111> dengan dopan N&P dalam 76,2 ~ 200 mm, yang ditanam dengan kaedah CZ. Kaedah Czochralski adalah kaedah pertumbuhan kristal, disebut sebagai kaedah CZ. Ia disatukan dalam sistem haba tiub lurus, dipanaskan oleh rintangan grafit, mencairkan polysilicon yang terdapat dalam wadah kuarza dengan kemurnian tinggi, dan kemudian memasukkan kristal biji ke permukaan lebur untuk pengelasan. Selepas itu, kristal biji putar diturunkan dan dicairkan. Tubuh disusupi dan disentuh, diangkat secara beransur-ansur, dan selesai atau ditarik melalui langkah-langkah mengikat, mengikat, memeluk, mengawal diameter yang sama, dan menyelesaikan.

  • Epitaxial Silicon Wafer

    Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.

  • Wafer digilap

    PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

  • punaran Wafer

    The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.