Silicon Wafer

PAM-XIAMEN, a silicon wafer manufacturing company, offers silicon wafer: FZ Silicon wafer, Test Wafer Monitor Wafer Dummy Wafer, Test Wafer, CZ wafer, epitaxial wafer, polished wafer, etching wafer.

The silicon wafer manufacturing process is crystal pulling, dicing, grinding, chamfering, etching, polishing, cleaning and inspection, among which crystal pulling, wafer polishing and inspection are the core links of Si wafer manufacturing. As the basic semiconductor substrate, silicon wafers must have high standards of purity, surface flatness, cleanliness, and impurity contamination to maintain the original designed functions of the chip. The high-specification requirements of semiconductor silicon wafers make its manufacturing process complicated. The four core steps include polysilicon purification and polysilicon ingot casting, single crystal Si wafer growth, and Si wafer cutting and shaping. As a raw material for wafer fab, the quality of silicon wafers directly determines the stability of the wafer application process. Large-size silicon wafers have become the future development trend of silicon wafers. In order to improve production efficiency and reduce costs, more and more large-size silicon wafers are used.

  • 12 "Perdana Gred Silicon Wafer

    PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.

  • 12 "Silicon wafer 300mm TOX (Si Thermal Oxidation Wafer)

    PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • 12 "Ujian Gred Silicon Wafer

    PAM-XIAMEN offers 300mm bare silicon wafers (12 inch) dummy, test grade, n type or p type. Compared to other silicon wafer suppliers, Powerway Wafer offers professional service with competitive prices.

  • Terapung-Zone Mono-Kristal Silicon

    PAM-XIAMEN boleh menawarkan wafer silikon zon terapung, yang diperoleh melalui kaedah Zon Terapung. Rod silikon monohablur diperolehi melalui pertumbuhan zon terapung, dan kemudian memproses rod silikon monohablur menjadi wafer silikon, dipanggil wafer silikon zon terapung. Oleh kerana wafer silikon cair zon tidak bersentuhan dengan pijar kuarza semasa proses silikon zon terapung, bahan silikon berada dalam keadaan terampai. Oleh itu, ia kurang tercemar semasa proses lebur zon terapung silikon. Kandungan karbon dan kandungan oksigen lebih rendah, kekotoran kurang, dan kerintangan lebih tinggi. Ia sesuai untuk pembuatan peranti kuasa dan peranti elektronik voltan tinggi tertentu.

  • Ujian Wafer Monitor Wafer Dummy Wafer

    Sebagai pengeluar wafer dummy, PAM-XIAMEN menawarkan wafer dummy silikon / wafer ujian / wafer monitor, yang digunakan dalam peranti pengeluaran untuk meningkatkan keselamatan pada permulaan proses pengeluaran dan digunakan untuk semakan penghantaran dan penilaian borang proses. Oleh kerana wafer silikon tiruan sering digunakan untuk eksperimen dan ujian, saiz dan ketebalannya adalah faktor penting dalam kebanyakan keadaan. Wafer tiruan 100mm, 150mm, 200mm atau 300mm tersedia.

  • Cz Mono-Kristal Silicon

    PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

  • Epitaxial Silicon Wafer

    Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.

  • Wafer digilap

    PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

  • punaran Wafer

    The etching silicon wafers offered by PAM-XIAMEN are N type or P type etching wafers, which have low roughness, low reflectivity and high reflectivity. The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, reducing the costs.