Silikon Mono-Kristal Zon Float
PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Penerangan Produk
PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
1. Float zone silicon wafer specification
ype | Jenis pengaliran | orientasi | Diameter (mm) | Kekonduksian (Ω • cm) |
Rintangan tinggi | N & P | <100> & <111> | 76.2-200 | >1000 |
NTD | N | <100> & <111> | 76.2-200 | 30-800 |
CFZ | N & P | <100> & <111> | 76.2-200 | 1-50 |
GD | N & P | <100> & <111> | 76.2-200 | 0.001-300 |
1.1 Floating zone silicon wafer specification
Parameter Ingot | Item | Penerangan |
Kaedah berkembang | FZ | |
orientasi | <111> | |
Off-orientasi | 4 ± 0.5 darjah ke <110> yang terdekat | |
Jenis / Dopant | P / Boron | |
kerintangan | 10-20 W.cm | |
RRV | ≤15% (Max edge-Cen) / Sen |
1.2 FZ silicon wafer specification
meter | Item | Penerangan |
diameter | 150 ± 0.5 mm | |
ketebalan | 675 ± 15 um | |
Negara Flat utama | 57.5 ± 2.5 mm | |
Orientation Flat utama | <011> ± 1 darjah | |
Menengah Flat Negara | Tiada | |
Orientation Flat menengah | Tiada | |
TTV | ≤5 um | |
Bow | ≤40 um | |
Warp | ≤40 um | |
Profil Tepi | Piawaian SEMI | |
Permukaan Depan | Penggilap Mekanikal Kimia | |
LPD | ≥0.3 um @ ≤15 pcs | |
Permukaan Belakang | Asid Terukir | |
Cip Tepi | Tiada | |
Pakej | Pembungkusan Vakum; Plastik Dalaman, Aluminium Luar |
2. Float-zone mono-crystalline silicon classifications
2.1 FZ-Silicon
The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float zone silicon process; no foreign material is introduced during the float zone silicon crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and such a high resistivity float zone silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices. It also can be used for dry etching process.
2.2 NTDFZ-Silicon
The mono-crystalline silicon with high-resistivity and uniformity can be achieved by neutron irradiation of FZ-silicon, to ensure the yield and uniformity of produced elements, and is mainly used to produce the silicon rectifier (SR), silicon control (SCR), giant transistor (GTR), gate-turn-off thyristor (GTO), static induction thyristor (SITH), insulate-gate bipolar transistor (IGBT), extra HV diode (PIN), smart power and power IC, etc; it is the main functional material for various frequency converters, rectifiers, large-power control elements, new power electronic devices, detectors, sensors, photoelectronic devices and special power devices.
FZ NTD Silicon Wafer with a Uniform Doping Concentration
2.3 GDFZ-Silicon
Utilizing the foreign-material diffusion mechanism, add the gas-phase foreign-material during the floating zone monocrystalline silicon process, to solve the doping problem of float-zone process from the root, and to get the GDFZ-silicon which is N-type or P-type, has the resistivity 0.001-300 Ω.cm, relative good resistivity uniformity and neutron irradiation. It is applicable for producing various semi-conductor power elements, insulate-gate bipolar transistor (IGBT) and high-efficiency solar cell, etc.
2.4 CFZ-Silicon
Silikon monokristalin dihasilkan dengan kombinasi proses Czochralski dan zon apungan, dan mempunyai kualiti antara silikon monokristalin CZ dan silikon monokristalin FZ; elemen khas boleh didoping, seperti Ga, Ge dan lain-lain. Wafer solar silikon CFZ generasi baru lebih baik daripada pelbagai wafer silikon dalam industri PV global pada setiap indeks prestasi; kecekapan penukaran panel solar adalah hingga 24-26%. Produk ini terutama digunakan dalam bateri solar dengan kecekapan tinggi dengan struktur khas, kontak belakang, HIT dan proses khas lain, dan lebih banyak digunakan dalam LED, elemen kuasa, automobil, satelit dan pelbagai produk dan bidang lain.
Kelebihan kami sepintas lalu
peralatan pertumbuhan epitaxy 1. lanjutan dan peralatan ujian.
2.Offer the highest quality with low defect density and good float zone silicon surface roughness.
3. kuat sokongan pasukan penyelidikan dan sokongan teknologi untuk pelanggan-pelanggan kami
Si MEMS Wafer Grown by FZ
4 ″ FZ Prime Silicon Wafer
3 "FZ Perdana Silicon Wafer Ketebalan: 350 ± 15um
4 Th Ketebalan FZ Prime Silicon Wafer: 400µm +/- 25µm
4 Th Ketebalan FZ Prime Silicon Wafer: 400µm +/- 25µm-2
4 ″ FZ Silicon Ingot dengan Diameter 100.7 ± 0.3mm
3 "FZ Silicon Wafer Ketebalan: 229-249μm -1
3 "FZ Silicon Wafer Ketebalan: 229-249μm -2
FZ Intrinsic wafer Silicon undoped
1 ″ FZ Silicon Ingot dengan Diameter 25mm
2 ″ FZ Silicon Ingot dengan Diameter 50mm
4″ FZ Intrinsic Silicon Wafer SSP
4″ FZ Intrinsic Silicon Wafer DSP
3 ″ FZ Silicon Ingot dengan Diameter 76mm
6 ″ FZ Silicon Wafer dengan Diameter 150mm, Kedua-dua Bahagian Terukir