Lithium niobate (LiNbO3) wafer has excellent electro-optic, nonlinear and piezoelectric properties. With the advanced micro- and nanofabrication techniques, integrated photonics devices based on lithium niobate on insulator (LNOI) thin films have been extensively studied. In the future, high-performance LiNbO3 thin film prepared will support [...]
2020-03-10meta-penulis
What is silicon made of?
Silicon is made from silicon dioxide, or silica – found in nature as quartz, or common beach sand.
First, the silica is put into a Silicon Furnace, where a carbon electrical arc reacts at high temperatures to drive the oxygen out [...]
InGaP / GaAs heterojunction bipolar transistor (HBT) has become one of the highly competitive and promising high-speed solid-state devices in the current microwave and millimeter wave field due to its high reliability, low cost, and relatively mature technology. PAM-XIAMEN provide InGaP / GaAs HBT wafers. [...]
2023-07-03meta-penulis
PAM XIAMEN offers 1654nm laser diode wafers.
Available Center Wavelengths: 1640nm – 1670nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 8mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 10 pm/mA
Slope Efficiency (typical): 0.10 mW/mA
For more [...]
2019-03-13meta-penulis
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAsP materials and other related products and services announced the new availability of 2″-3” size is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.Dr. Shaka, said, “We are pleased to offer GaAsP wafers to our [...]
2017-06-15meta-penulis
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-8
Item5, 125pcs
Silicon wafer:
i. Diameter:100 mm ± 0.5 mm,
ii. Thickness: 525μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: [...]
2020-03-27meta-penulis
