PAM XIAMEN offers LD Bare Bar for 976nm@cavity 4mm.
Brand: PAM-XIAMEN
Wavelength: 976nm
Filling Factor: 10%
Output Power: 35W
Cavity Length:4mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
Equipment Shortages Pushes Back Sharp’s OLED Production
Sharp might be adjusting its OLED panel production plan, and move the production plant in Taiwan to a joint venture factory with Foxconn in Japan, reported Nikkei Asian Review.
The joint venture with Foxconn is a 10th generation display [...]
2016-08-30meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
4H N type SiC wafer with Nitrogen doped is available, size from 2” to 4”. Dummy wafer and prime wafer are available. High quality single crystal SiC wafer are available for MBE growth research, electronics and optoelectronics industries. SiC wafer is a next-generation semiconductor material with [...]
2018-08-07meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions [...]
2019-12-02meta-author
PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates.
General Properties for Tungsten
Symbol W
Atomic Number 74
Atomic Weight: 183.84
Crystal structure: BCC
Lattice constant at room temperature: 0.316 nm
Density: 19.25 g/cm3
Melting Point: 3422 °C
Boiling Point: 5555 °C
Tungsten (W) Polycrystalline Substrate: [...]
2019-05-20meta-author