Mask photo

Penerangan Produk

Mask photo

Tawaran PAM-XIAMENPhotomasks

Saiz Besar Photomask

Photomask Middium dan Saiz Kecil

Plat gambar

Surat Huruf Filem Fotografi

Filem Fotografi

Chrome Photomask

Chromium Photomask Kosong

Topeng Fotolitografi

Atopeng gambaradalah lapisan nipis dari bahan pelindung yang disokong oleh substrat yang lebih tebal, dan bahan pelindung menyerap cahaya hingga tahap yang berbeza-beza dan dapat digambarkan dengan reka bentuk khusus. Corak ini digunakan untuk memodulasi cahaya dan memindahkan corak melalui proses fotolitografi yang merupakan proses asas yang digunakan untuk membina hampir semua peranti digital masa kini.

Apa itu Photomask

Photomask adalah plat legap dengan lubang atau ketelusan yang membolehkan cahaya bersinar dalam corak yang ditentukan. Mereka biasanya digunakan dalam fotolitografi. Litografimesin fotostatbiasanya kosong silika bersatu transparan ditutup dengan corak yang ditentukan dengan filem penyerap logam krom.Photomasks are used at wavelengths of 365 nm, 248 nm, and 193 nm. Photomasks have also been developed for other forms of radiation such as 157 nm, 13.5 nm (EUV), X-ray, electrons, and ions; but these require entirely new materials for the substrate and the pattern film. A set of photomask, each defining a pattern layer in integrated circuit fabrication, is fed into a photolithography stepper or scanner, and individually selected for exposure. In double patterning techniques, a photomask would correspond to a subset of the layer pattern. In photolithography for the mass production of integrated circuit devices, the more correct term is usually photoreticle or simply reticle. In the case of a photomask, there is a one-to-one correspondence between the mask pattern and the wafer pattern. This was the standard for the 1:1 mask aligners that were succeeded by steppers and scanners with reduction optics. As used in steppers and scanners, the reticle commonly contains only one layer of the chip. (However, some photolithography fabrications utilize reticles with more than one layer patterned onto the same mask). The pattern is projected and shrunk by four or five times onto the wafer surface. To achieve complete wafer coverage, the wafer is repeatedly “stepped” from position to position under the optical column until full exposure is achieved. Features 150 nm or below in size generally require phase-shifting to enhance the image quality to acceptable values. This can be achieved in many ways. The two most common methods are to use an attenuated phase-shifting background film on the mask to increase the contrast of small intensity peaks, or to etch the exposed quartz so that the edge between the etched and unetched areas can be used to image nearly zero intensity. In the second case, unwanted edges would need to be trimmed out with another exposure. The former method is attenuated phase-shifting, and is often considered a weak enhancement, requiring special illumination for the most enhancement, while the latter method is known as alternating-aperture phase-shifting, and is the most popular strong enhancement technique. As leading-edge semiconductor features shrink, photomask features that are 4× larger must inevitably shrink as well. This could pose challenges since the absorber film will need to become thinner, and hence less opaque. A recent study by IMEC has found that thinner absorbers degrade image contrast and therefore contribute to line-edge roughness, using state-of-the-art photolithography tools. One possibility is to eliminate absorbers altogether and use “chromeless” masks, relying solely on phase-shifting for imaging. The emergence of immersion lithography has a strong impact on photomask requirements. The commonly used attenuated phase-shifting mask is more sensitive to the higher incidence angles applied in “hyper-NA” lithography, due to the longer optical path through the patterned film.

Bahan Topeng -Perbezaan antara Quartz dan Soda Lime Glass:

Jenis kaca yang paling biasa untuk pembuatan topeng adalah Quartz dan Soda Lime. Kuarza lebih mahal, tetapi mempunyai kelebihan pekali Pengembangan Termal yang jauh lebih rendah (yang bermaksud ia mengembang lebih sedikit jika topeng menjadi hangat semasa digunakan) dan juga telus pada panjang gelombang Ultraviolet (DUV) yang lebih dalam, di mana kaca Soda Lime legap. Kuarza perlu digunakan di mana panjang gelombang yang digunakan untuk mendedahkan topeng kurang dari atau sama dengan 365nm (i-line). Topeng fotolitografi adalah plat atau filem legap dengan kawasan lutsinar yang membolehkan cahaya bersinar dalam corak yang ditentukan. Mereka biasanya digunakan dalam proses fotolitografi, tetapi juga digunakan dalam banyak aplikasi lain oleh berbagai industri dan teknologi. Terdapat pelbagai jenis topeng untuk aplikasi yang berbeza iaitu berdasarkan resolusi yang diperlukan.

Untuk maklumat lebih lanjut mengenai produk, sila hubungi kami di luna@powerwaywafer.com atau powerwaymaterial@gmail.com.

Topeng Master 1X

1X Ukuran Topeng Master dan Bahan Substrat

Spesifikasi Umum untuk Masker Induk 1X (Bahan Kuarsa)

Spesifikasi Umum untuk Masker Master 1X (Bahan Soda Lime)

Topeng UT1X

Dimensi Topeng UT1X dan Bahan Substrat

Spesifikasi Umum untuk Topeng UT1X

Topeng Perduaan Standard

Dimensi dan Bahan Substrat Topeng Binari Standard

Spesifikasi Umum untuk Topeng Binari Standard

Topeng Kawasan Medium

Dimensi dan Bahan Topeng Kawasan Medium

Spesifikasi Umum untuk Topeng Kawasan Sederhana (Bahan Kuarsa)

Spesifikasi Umum untuk Topeng Kawasan Medium (Bahan Soda Lime)