Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate
In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, for the application to ultra-fast all-optical logic gate devices. The device length was 1650 μm, and a maximum gain of 35 dB was obtained under an injection current of 500 mA. We also input two serial femto-second duplicated pulses into the QD-SOA by changing the duration and observed the output auto-correlation waveforms. As a result, an effective carrier transition time was estimated to be about 1 ps.
- QD-SOA;
- 1550 nm-band;
- InP(311)B;
- Femto-second optical pulse response
SOURCE:SCIENCEDIRECT
PAM-XIAMEN can supply InP (311) substrate with specification as following:
| Material | InP |
| Diameter | 50.6±0.3mm |
| Thickness | 350±25um |
| Orientation | (311)0° |
| Growth Method | VGF |
| Conductivity | S-C-N |
| Dopant | S |
| OF Location/Length | EJ±0.5°/16±1mm |
| IF Location/Length | EJ±0.5°/7±1mm |
| Ingot CC | Min:2.00E+18/cm3 Max:8.00E+18/cm3 |
| Resistivity | Min:0.6E-03Ω.cm Max:2.5E-03Ω.cm |
| Mobility | Min:1000/cm2/V.s Max:2000/cm2/V.s |
| EPD | Ave:≤1000/cm2 |
| TTV/TIR | ≤10um |
| Bow | ≤10um |
| Warp | ≤15um |
| Edge Rounding | 0.250mmR |
| Surface Finish-front | Polished |
| Surface Finish-back | Etched |
| Particle Count | N/A |
| Epiready | Yes |
| Laser Marking | N/A |
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.