Multisite microLED optrode array for neural interfacing

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Article title:Multisite microLED optrode array for neural interfacing

Published by:

Niall McAlinden; Yunzhou Cheng; Robert Scharf; Enyuan Xie; Erdan Gu; Christopher F. Reiche; Rohit Sharma; Prashant Tathireddy; Prashant Tathireddy; Loren Rieth; Steve Blair; Keith Mathieson

1.Univ. of Strathclyde (United Kingdom)
2.The Univ. of Utah (United States)
3.The Univ. of Utah (United Kingdom)
4.The Feinstein Institute for Medical Research (United States)

Picture of LED wafer:

 

 

 

 

 

 

 

Abstract

We present an electrically addressable optrode array capable of delivering light to 181 sites in the brain, each providing sufficient light to optogenetically excite thousands of neurons in vivo, developed with the aim to allow behavioral studies in large mammals. The device is a glass microneedle array directly integrated with a custom fabricated microLED device, which delivers light to 100 needle tips and 81 interstitial surface sites, giving two-level optogenetic excitation of neurons in vivo. Light delivery and thermal properties are evaluated, with the device capable of peak irradiances >80  mW  /  mm2 per needle site. The device consists of an array of 181 80  μm  ×  80  μm2 microLEDs, fabricated on a 150-μm-thick GaN-on-sapphire wafer, coupled to a glass needle array on a 150-μm thick backplane. A pinhole layer is patterned on the sapphire side of the microLED array to reduce stray light. Future designs are explored through optical and thermal modeling and benchmarked against the current device.

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… The microLED array is fabricated from 3-in. GaN-on-sapphire wafers (Xiamen Powerway Advanced Material) with a 400 – μ m -thick sapphire substrate and a 5 – μ m epitaxial GaN layer stack. 34 Full fabrication details are included in Fig …”

Source:

https://www.spiedigitallibrary.org/journals/Neurophotonics/volume-6/issue-3/035010/Multisite-microLED-optrode-array-for-neural-interfacing/10.1117/1.NPh.6.3.035010.full?SSO

About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Now PAM-XIAMEN offer GaN material including GaN substrate, GaN on sapphire, InGaN, InN, and AlN epitaxial wafer with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities. As well as GaN based LED wafer and AlGaN/GaN HEMT wafer.

PAM-XIAMEN also offer SiC and GaAs/InP material from wafer substrate to epitaxial growth.

Powerway Wafer Co.,Limited is a sub company of Xiamen Powerway Advanced Material Co., Ltd specialize in dealing with overseas orders.

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