PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1000
P/E
>5
SEMI Prime, in hard cassettes of 6, 6 & 7 wafers
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1300
P/E
>5
SEMI Prime, hard cst
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
E/E
>5
SEMI, LaserMark, in opened hard cast
n-type Si:P
[111-2.5°] ±0.5°
3″
380
P/E
1-3
SEMI Prime
n-type Si:P
[111] ±0.5°
3″
380
P/E
1-10
SEMI Primet
n-type Si:P
[111-3.0°] ±1°
3″
381
P/E
1-20 {1.7-5.7}
SEMI Test
n-type Si:P
[111] ±0.5°
3″
570
P/P
1-10
SEMI Primet
n-type Si:Sb
[111] ±0.5°
3″
380
P/E
0.019-0.026
SEMI Prime, in Empak cassettes [...]
2019-03-06meta-author
PAM XIAMEN offers high quality GaSb single crystal wafers.
1. Specifications of GaSb Single Crystal Wafers
GaSb undoped
GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, [...]
2019-04-22meta-author
Safety Data Sheet of Indium Phosphide Wafer
Product Name:
Indium Phosphide
Date of Issue:
SDS No.:
PAM-001
2017/10/15
1.PRODUCT AND COMPANY IDENTIFICATION
Product Name: Indium Phosphide
Chemical Formula: InP Mol. Wt. 145.79
Manufacturer: Powerway Wafer Co.,Limited
Address:#506B, Henghui Business Center,No.77,Lingxia Nan Road
High Technology Zone, Huli, Xiamen,361000
2.HAZARD IDENTIFICATION
Toxic by inhalation and if swallowed.Gives rise to hazardous [...]
2020-08-04meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 1
0.0 ± 1.0°
1 – 100 Ohmcm
100 ± 0.3 mm
302 ± 4 µm
35
4
35
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 0,50
90 ± 5.0 °, [...]
2019-02-25meta-author
A template-based vision system for the 100% inspection of wafer die surfaces has been developed. Design goals included a requirement for the detection of flaws as small as two thousandths of an inch on parts up to 8-in. wafer size. Each die is treated [...]
The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire
This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as [...]
2013-04-03meta-author
