PAM-XIAMEN can offer 6 inch N-type GaAs wafer. Gallium arsenide is a second-generation semiconductor material with excellent performance. Gallium arsenide belongs to the second-generation semiconductors, which has far superior frequency, power and withstand voltage performance than the first-generation silicon semiconductors. According to different resistance, GaAs materials can be divided into semiconductor type and semi-insulating type. Semi-insulating gallium arsenide substrate is mainly used to make PA components in mobile phones because of its high resistivity and good high-frequency performance. Gallium arsenide n type semiconductor is mainly used in optoelectronic devices, like LEDs, VCSELs (vertical cavity surface emitting lasers), etc. The specifications of N-type GaAs wafer are as follows:

1. Specifications of N-type GaAs Wafer

Item 1:

PAM-210406-GAAS

Parameter	Customer’s Requirements		Guaranteed/Actual Values		UOM
Growth Method:	VGF		VGF
Conduct Type:	S-C-N		S-C-N
Dopant:	GaAs-Si		GaAs-Si
Diameter:	150.0±0.3		150.0±0.3		mm
Orientation:	(100)15°±0.5° off toward (011)		(100)15°±0.5° off toward (011)
Notch orientation:	[010]±2°		[010]±2°
NOTCH Depth:	(1-1.25) mm 89°-95°		(1-1.25) mm 89°-95°
lngot CC:	Min:0.4 E18	Max:3.5 E18	Min:0.4 E18	Max:0.9 E18	/cm3
Resistivity:	N/A		N/A		Ω*cm
Mobility:	N/A		N/A		cm2/V-s
EPD:	Max:5000		Min:200	Max:500	/cm2
Thickness::	550±25		550±25		um
Edge Rounding:	0.25		0.25		mmR
laser Marking:	Back side		Back side
TTV:	Max;10		Max:10		um
TIR:	Max:10		Max:10		um
Bow:	Max;10		Max:10		um
Warp:	Max:10		Max:10		um
Surface Finish–front:	Polished		Polished
Surface Finish-back:	Polished		Polished
Epi-Ready:	Yes		Yes

 

Item 2:

PAM-210412-GAAS

Parameter	Customer’s Requirements		Guaranteed/Actual Values		UOM
Growth Method:	VGF		VGF
Conduct Type:	S-C-N		S-C-N
Dopant:	GaAs-Si		GaAs-Si
Diameter:	150.0±0.3		150.0±0.3		mm
Orientation:	(100)±0.5° off toward (011)		(100)±0.5° off toward (011)
Notch orientation:	[010]±2°		[010]±2°
NOTCH Depth:	(1-1.25) mm 89°-95°		(1-1.25) mm 89°-95°
lngot CC:	Min:0.4 E18	Max:3.5 E18	Min:0.4 E18	Max:0.9 E18	/cm3
Resistivity:	N/A		N/A		Ω*cm
Mobility:	N/A		N/A		cm2/V-s
EPD:	Max:5000		Min:200	Max:500	/cm2
Thickness::	625±25		625±25		um
Edge Rounding:	0.25		0.25		mmR
laser Marking:	Back side		Back side
TTV:	Max;10		Max:10		um
TIR:	Max:10		Max:10		um
Bow:	Max;10		Max:10		um
Warp:	Max:10		Max:10		um
Surface Finish–front:	Polished		Polished
Surface Finish-back:	Polished		Polished
Epi-Ready:	Yes		Yes

 

Item 3: Gallium Arsenide Substrates Doped with Silicon (N-type) 

method of growing the initial single crystal gallium arsenide = VGF (vertical gradient freeze) 

Crystallographic orientation of the substrate surface = in the (100) direction 

Accuracy of orientation of the substrate surface = +/- 0.5 deg. 

Silicon doping 

Carrier concentration from 1 * 10 (18) cm-3 to 4 * 10 (18) cm-3 

Surface density of defects, controlled by the number of etch pit density (EPD) = no more than 500 cm-2 

Diameter 50.8 + \ – 0.4mm 

Thickness 350 + \ – 25 microns 

SEMI-E / J Base cut Orientation 

The direction of the main chamfer corresponds to (0-1-1) +/- 0.50 

Main chamfer length 17 +/- 1mm 

The direction given by the additional chamfer corresponds to (0-11) 

Face side = polished, epi-ready 

Back side  = polished 

Packaging = individual container for each substrate, packed in a metallized polyethylene bag filled with an inert gas

2. Adavantages and Applications N-type GaAs Substrate

Due to the characteristics of RF front-end devices, including high voltage resistance, high temperature resistance, and high frequency use, there is a high demand in the 4G and 5G era. Traditional Si devices, such as HBT and CMOS, can not meet the requirements. Manufacturers are gradually turning their attention to n-type doping GaAs wafer. N-type GaAs ohmic contact compound semiconductors have higher electron mobility than Si devices, and have the characteristics of anti-interference, low noise and high voltage resistance. Therefore, N-type GaAs wafer are particularly suitable for high-frequency transmission in wireless communications.

 

3. FAQ

Q1:Is there any GaAs wafter with lower EPD, such as lower than 500 or 1000?

A: Yes, GaAs, n type/Si doping 3″ or 4″ diameter (100) orientation doping level 0.4-4E18  EPD<500.

Q2: Is there lower doping GaAs wafer or narrow down the doping level to the order of e17cc?

A: Please note the doping concentration is constant, we can not change it.

For more information, please contact us email at [email protected] and [email protected].