N-type GaAs Wafer

PAM-XIAMEN can offer 6 inch N-type GaAs wafer. Gallium arsenide is a second-generation semiconductor material with excellent performance. Gallium arsenide belongs to the second-generation semiconductors, which has far superior frequency, power and withstand voltage performance than the first-generation silicon semiconductors. According to different resistance, GaAs materials can be divided into semiconductor type and semi-insulating type. Semi-insulating gallium arsenide substrate is mainly used to make PA components in mobile phones because of its high resistivity and good high-frequency performance. Gallium arsenide n type semiconductor is mainly used in optoelectronic devices, like LEDs, VCSELs (vertical cavity surface emitting lasers), etc. The specifications of N-type GaAs wafer are as follows:

n-type GaAs wafer

Item 1:

PAM-210406-GAAS

ParameterCustomer’s RequirementsGuaranteed/Actual ValuesUOM
Growth Method:VGFVGF
Conduct Type:S-C-NS-C-N
Dopant:GaAs-SiGaAs-Si
Diameter:150.0±0.3150.0±0.3mm
Orientation:(100)15°±0.5° off toward (011)(100)15°±0.5° off toward (011)
Notch orientation:[010]±2°[010]±2°
NOTCH Depth:(1-1.25) mm 89°-95°(1-1.25) mm 89°-95°
lngot CC:Min:0.4 E18Max:3.5 E18Min:0.4 E18Max:0.9 E18/cm3
Resistivity:N/AN/AΩ*cm
Mobility:N/AN/Acm2/V-s
EPD:Max:5000Min:200Max:500/cm2
Thickness::550±25550±25um
Edge Rounding:0.250.25mmR
laser Marking:Back sideBack side
TTV:Max;10Max:10um
TIR:Max:10Max:10um
Bow:Max;10Max:10um
Warp:Max:10Max:10um
Surface Finish–front:PolishedPolished
Surface Finish-back:PolishedPolished
Epi-Ready:YesYes 

 

Item 2:

PAM-210412-GAAS

ParameterCustomer’s RequirementsGuaranteed/Actual ValuesUOM
Growth Method:VGFVGF
Conduct Type:S-C-NS-C-N
Dopant:GaAs-SiGaAs-Si
Diameter:150.0±0.3150.0±0.3mm
Orientation:(100)±0.5° off toward (011)(100)±0.5° off toward (011)
Notch orientation:[010]±2°[010]±2°
NOTCH Depth:(1-1.25) mm 89°-95°(1-1.25) mm 89°-95°
lngot CC:Min:0.4 E18Max:3.5 E18Min:0.4 E18Max:0.9 E18/cm3
Resistivity:N/AN/AΩ*cm
Mobility:N/AN/Acm2/V-s
EPD:Max:5000Min:200Max:500/cm2
Thickness::625±25625±25um
Edge Rounding:0.250.25mmR
laser Marking:Back sideBack side
TTV:Max;10Max:10um
TIR:Max:10Max:10um
Bow:Max;10Max:10um
Warp:Max:10Max:10um
Surface Finish–front:PolishedPolished
Surface Finish-back:PolishedPolished
Epi-Ready:YesYes 

 

Due to the characteristics of RF front-end devices, including high voltage resistance, high temperature resistance, and high frequency use, there is a high demand in the 4G and 5G era. Traditional Si devices, such as HBT and CMOS, can not meet the requirements. Manufacturers are gradually turning their attention to n-type doping GaAs wafer. N-type GaAs ohmic contact compound semiconductors have higher electron mobility than Si devices, and have the characteristics of anti-interference, low noise and high voltage resistance. Therefore, N-type GaAs wafer are particularly suitable for high-frequency transmission in wireless communications.

 

FAQ

Q1:Is there any GaAs wafter with lower EPD, such as lower than 500 or 1000?

A: Yes, GaAs, n type/Si doping 3″ or 4″ diameter (100) orientation doping level 0.4-4E18  EPD<500.

Q2: Is there lower doping GaAs wafer or narrow down the doping level to the order of e17cc?

A: Please note the doping concentration is constant, we can not change it.

For more information, please contact us email at [email protected] and [email protected].

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