N Type GaN

2″GaN Free-standing Substrate
Item      PAM-FS-GaN50-N
Conduction Type N-type
Size 2″(50.8)+/-1mm
Thickness 300+/-25um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (1-100)+/-0.5o
Primary Flat Length 16+/-1mm
Secondary Flat Location (11-20)+/-3o
Secondary Flat Length 8+/-1mm
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5×106cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
                                                                                                           Back Surface:1.Fine ground
                                                                                                                                    2.Rough grinded
Usable Area ≥ 90 %

N Type GaN

 

 

 

 

 

 

Dia.25.4/38.1/40.0/45.0mm GaN Free-standing Substrate
Item PAM-FS-GaN45-N                                PAM-FSGaN40-N                                 PAM-FS-GaN38-N                                 PAM-FS-GaN25-N
Conduction Type N-type
Size Dia.25.4/38.1/40.0/45.0+/-0.5mm
Thickness 300+/-25um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (1-100)+/-0.5o
Primary Flat Length 8/12/14/14+/-1mm
Secondary Flat Location (11-20)+/-3o
Secondary Flat Length 4/6/7/7+/-1mm
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5×106cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
                                                                                                           Back Surface:1.Fine ground
                                                                                                                                    2.Rough grinded
Usable Area ≥ 90 %

N Type GaN

 

 

 

 

 

 

15mm,10mm,5mm GaN Free-standing Substrate
Item PAM-FS-GaN15-N                                 PAM-FS-GaN10-N                                 PAM-FS-GaN5-N
Conduction Type N-type
Size 14.0mm*15mm 10.0mm*10.5mm 5.0*5.5mm
Thickness 300/350/400+/-25um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location
Primary Flat Length
Secondary Flat Location
Secondary Flat Length
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5×106cm-2
Marco Defect Density 0cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
                                                                                                           Back Surface:1.Fine ground
                                                                                                                                    2.Rough grinded
Usable Area ≥ 90 %

N Type GaN

 

 

 

 

Note:
Validation Wafer:Considering convenience of usage, PAM-XIAMEN offer 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN

 

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