N Type Sb Doped Silicon Wafer for Integrated Circuit Manufacturing

N Type Sb Doped Silicon Wafer for Integrated Circuit Manufacturing

PAM-XIAMEN, one of leading silicon wafer producers, can offer 4 inch N type Sb doped Silicon wafer. As an important substrate for epitaxial growth, heavily doped antimony silicon wafers are widely used in integrated circuit manufacturing.

Sb doped silicon wafer

1. Specification of 4 inch Sb Doped Si wafer (PAM210618-SI)

Item Silicon wafer
Diameter 100.0±0.5mm
Thickness 525±25µm
Conductivity type N-type
Dopant Si:Sb
Orientation [100]±0.5°
Resistivity 0.01-0.02 Ohm*cm
TTV <5µm
Surface finished Both-sides-polished
Primary Flat SEMI Flats (two)
Package Sealed in Empak or equivalent cassette

 

2. Study on Silicon Wafer with Antimony Dopant

The use of Sb doped silicon single crystal as N/N epitaxial wafer has many advantages, such as narrow transition zone, steep junction gradient, and small diffusion coefficient of antimony at high temperature, making it a good substrate material.

2.1 Overview of Silicon Wafer Resistivity

However, due to the small segregation coefficient of antimony in silicon wafer, the high concentration of heavily doped antimony, and the large evaporation constant of antimony, it is difficult to control the Sb doped silicon wafer resistivity. Through the crystal pulling experiment by PAM-XIAMEN, the influence of the crystal pulling process on the resistivity is studied. By selecting appropriate process parameters, the resistivity of silicon wafer and longitudinal uniformity can be accurately controlled.

2.2 Determine the Resistivity of Sb Doped Silicon Wafer

Samples are cut off at the head, middle and tail of the drawn single crystal rod, and the resistivity of the sample is measured by the straight four-probe method at room temperature in accordance with ASTM F43-83 standard.

During the growth of heavily doped antimony crystals, part of the antimony in the melt evaporates into the argon atmosphere, and part of it segregates into the Sb doped silicon wafer growth process. The donor impurity antimony entering the single crystal is severely degenerate, and the ionized donor becomes a carrier, which determines the resistivity together with its mobility.

Resistivity experimental value and calculated value of Sb doped silicon wafer under different silicon wafer manufacturing process are:

No. T(h) P V(mm/h) g1 g2 Experimental Calculated
P1(*10-2 ohm-cm) P2(*10-2 ohm-cm) P3(*10-2 ohm-cm) P1(*10-2 ohm-cm) P2(*10-2 ohm-cm) P3(*10-2 ohm-cm)
1 8.0 19.0 48 0.38 0.78 1.83 1.60 1.19 1.81 1.59 1.19
2 3.0 19.0 48 0.40 0.80 1.68 1.42 1.07 1.65 1.45 1.07
3 7.0 19.0 47 0.42 0.70 1.74 1.45 1.14 1.78 1.51 1.16
4 3.0 16.8 53 0.45 0.78 1.67 1.42 1.08 1.67 1.41 1.10
5 6.0 17.0 51 0.49 0.80 1.77 1.49 1.14 1.76 1.51 1.14
6 4.6 16.5 49 0.34 0.82 1.75 1.45 1.12 1.72 1.46 1.09
7 8.0 16.0 48 0.46 0.76 1.87 1.63 1.16 1.85 1.68 1.27
8 2.5 16.0 48   0.78 1.66 1.41 1.12 1.66 1.41 1.10

From the table above, we can see that the shorter the crystallization time, the greater the furnace pressure, the greater the crystal pulling rate, and the smaller the single crystal resistivity.

Therefore, the crystallization time, furnace pressure and growth rate seriously affect the resistivity of Sb-doped silicon wafer. Choosing appropriate growth parameters can accurately control the resistivity and longitudinal uniformity of the heavily doped antimony single crystal.

For more information, please contact us email at [email protected] and [email protected].

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