On application of electrochemical capacitance–voltage profiling technique for n-type SiC

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On application of electrochemical capacitance–voltage profiling technique for n-type SiC

The behaviour of n-6H SiC in HF- and KOH-based electrolytes is studied. It is shown that at the room temperature the dissolution of SiC in these electrolytes is accompanied by a number of side effects, such as passivation of the etched surface with an anodic film or surface roughening. On the basis of the results obtained, an etching method employing repetitive use of both electrolytes is proposed for accurate characterization of n-SiC with the electrochemical capacitance–voltage technique.

 

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2019-03-25

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