Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide†

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Article title:Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide†

Published by:

Qiang Li ;Jun-Feng Wang ;Fei-Fei Yan ;Ze-Di Cheng ;Zheng-Hao Liu ; Kun Zhou ;Li-Ping Guo ;Xiong Zhou ;Wei-Ping Zhang ;Xiu-Xia Wang ;Wei Huang ;Jin-Shi Xu ;Chuan-Feng Li ;Guang-Can Guo.

a.CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China.
b.CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
c.Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People’s Republic of China
d.Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
e.Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China

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Abstract

Color centers in silicon carbide have recently attracted broad interest as high bright single photon sources and defect spins with long coherence time at room temperature. There have been several methods to generate silicon vacancy defects with excellent spin properties in silicon carbide, such as electron irradiation and ion implantation. However, little is known about the depth distribution and nanoscale depth control of the shallow defects. Here, a method is presented to precisely control the depths of the ion implantation induced shallow silicon vacancy defects in silicon carbide by using reactive ion etching with little surface damage. After optimizing the major etching parameters, a slow and stable etching rate of about 5.5 ± 0.5 nm min−1 can be obtained. By successive nanoscale plasma etching, the shallow defects are brought close to the surface step by step. The photoluminescence spectrum and optically detected magnetic resonance spectra are measured, which confirm that there were no plasma-induced optical and spin property changes of the defects. By tracing the mean counts of the remaining defects after each etching process, the depth distribution of the defects can be obtained for various implantation conditions. Moreover, the spin coherence time T2* of the generated VSi defects is detected at different etch depths, which greatly decreases when the depth is less than 25 nm. The method of nanoscale depth control of silicon vacancies would pave the way for investigating the surface spin properties and the applications in nanoscale sensing and quantum photonics.

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… and quantum photonics. 21,30,35. 2 Experiments. In the experiment, high-purity 4H-SiC epitaxy growth wafers with a thickness of about 7 μm are used (Xiamen Powerway Advanced Material Co., Ltd). The etching processes …”

Source:https://pubs.rsc.org/en/content/articlehtml/2019/nr/c9nr05938e

About Xiamen Powerway Advanced Material Co., Ltd

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.

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