PAM XIAMEN offers NdCaAlO4 crystal.
Crystal | Structure /lattice constant | M.P. oC | Density g/cm3 | Thermo-Expans x10-6/K |
Dielectric constant | Lattice Mismatch to YBCO | Max. Dia |
NdCaAlO4 | Tetrag.a=3.685 c=12.12 | 1850 | 5.56 | 12 | 19.5 | 0.055 | CZ 35mm |
NdCaAlO4 (001) 10x10x0.5 mm, 1 side polished
NdCaAlO4 (001) 10x10x0.5 mm, 2 sides polished
NdCaAlO4 (100) 10x10x0.5 mm, 1 side polished
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.