NDGAO3 NEODYMIUM GALLATE CRYSTAL SUBSTRATE

PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.

                                                   Main Parameters
Growth Method orthogonal
Unit cell constant a=5.43、b=5.50、c=7.71
Melt point(℃) 1600℃
Density 7.57g/cm3
Dielectric constants 25
Growth method hanging maneuver method
Size 10×3, 10×5, 10×10, 15×15, 20×15, 20×20
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″
Thickness 0.5mm, 1.0mm
Polishing Single or double
Crystal orientation <100>  <110>  <111>
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)

NdGaO3 crystal is a new single-crystal substrate material developed in recent years. NdGaO3 substrates are mainly used for high-temperature superconductors (YBCO) and magnetic Epitaxial films growth, because NdGaO3 and YBCO have small lattice mismatch (~0.27%), and no structural phase change at the crystal interface.

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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