PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.
|Unit cell constant||a=5.43、b=5.50、c=7.71|
|Growth method||hanging maneuver method|
|Size||10×3, 10×5, 10×10, 15×15, 20×15, 20×20|
|Ф15, Ф20, Ф1″, Ф2″, Ф2.6″|
|Polishing||Single or double|
|Crystal orientation||＜100＞ ＜110＞ ＜111＞|
|Redirection the edge:||2°（special in 1°）|
|Angle of crystalline||Special size and orientation are available upon request|
NdGaO3 crystal is a new single-crystal substrate material developed in recent years. NdGaO3 substrates are mainly used for high-temperature superconductors (YBCO) and magnetic Epitaxial films growth, because NdGaO3 and YBCO have small lattice mismatch (~0.27%), and no structural phase change at the crystal interface.
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.