New substrate

PAM XIAMEN offers New substrate.

GYSGG (Gd0.63Y2.37Sc2Ga3O12) Substrate (111 ) 10x10x0.5 mm, 1 SP

NGG (Nd3Ga5O12) Substrate (111 ) 10x10x0.5 mm, 1 SP

YSGG (Y3Sc2Ga3O12) Substrate (111 ) 10x10x0.5 mm, 1 SP

Bi-Crystal LSAT Substrate (100) 10x10x0.5 mm, 1sp, 24 Degree

SrTiO3 Substrate with Step Surface & Ti terminated (100) 10x10x0.5mm, 1 SP

Nb: SrTiO3 (100), 0.05 wt% Nb, 10x10x0.5mm, 1sp(Crystal Made in Japan)

LSGM Single Crystal Substrate, 10x10x0.5 mm,< 110> ori. 2SP

Au (Gold) Single Crystal Substrate: <111>, 10x10x0.5 mm, 1 side polished

Bi-Crystal LSAT Substrate (100) 10x10x0.5 mm, 1sp, 30 Degree

Bi-Crystal LSAT Substrate (100) 10x10x0.5 mm, 1sp, 36 Degree

Bi-Crystal LSAT Substrate (100) 10x10x0.5 mm, 1sp, 45 Degree”

SiO2+TiO2+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp P-type B-doped, (SiO2=300nm,TiO2=20nm ,Pt(111)=150nm)

YIG single crystal substrate, one side polished, (111), 5 mm dia. x 0.5 mm

ZnO(50nm) on Fused Silca 10x10x0.5mm

GaN Template ( 100nm) on Silicon Wafer, , 10×10 mm, GaNSi-1010-100-US

GaN Template ( 100nm) on Silicon Wafer, , 5mmx5 mm, GaNSi-1010-100-US

GaN Template ( 200nm) on Silicon Wafer, 10×10 mm, GaN on Si-1010-200-US

GaN Template ( 200nm) on Silicon Wafer, 5mm x 5 mm, GaN on Si-0505-200-US

YIG Film (4-5 um, ) on both sides of GGG Substrate , (111),10x10x0.5mm,Research Grade with surface defects

50 nm SrRuO3 Conductive Epi Film on SrTiO3 Substrate <100> 5x5x0.5 mm, 1sp

GSGG – Gd3Sc2Ga3O12- ( 111) orn. 10x10x0.5mm, 1sp

MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm

SGGG – Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12, (111), 10x10x0.5mm, 1sp

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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