Photonics Epitaxial Wafers

With the continuous evolution of optical telecommunication and opto-electronics device applications towards high speed and high performance, we are closely following market demand in photonics epitaxial wafers for high-speed and high-end optoelectronic applications. PAM-XIAMEN can provide a series of compound semiconductor based photonics epitaxial wafers, which can be used as key optoelectronic chip [...]

SiC BJT Wafer *S

SiC wafer can be used to manufacture BJT (bipolar junction transistor) devices with low conduction resistance and high blocking voltage up to tens of kilovolts. For applications with a blocking voltage of 4.5kV and higher, bipolar SiC power devices will have more practical application value than unipolar SiC power devices. Compared with most field-effect [...]

SiC MESFET Epitaxial Wafer *S

MESFET (Metal-Semiconductor Field Effect Transistor) is a field-effect transistor composed of Schottky barrier gates. SiC microwave MESFET was developed between 1995 and 2002 to replace GaAs microwave field effect transistors (FETs). There are three types of substrate materials used conductive substrate (n+- SiC), high-purity semi insulating substrate (SI SiC), or insulating substrate [...]

4H-SiC GTO Wafer *S

The ultra-high voltage gate turn-off thyristor (GTO) device based on 4H-SiC, under the action of bidirectional carrier injection and conductivity modulation effects, can withstand high voltage while obtaining high pass current, meeting the requirements of ultra high power applications in terms of power density and reliability. PAM-XIAMEN can grow 4H-SiC [...]

4H-SiC for High Overtone Bulk Acoustic Resonator (HBAR)

High-overtone bulk acoustic resonator (HBAR) combines the advantages of surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, providing high Q values, stable frequency operating range, and low frequency jitter noise, which can meet the needs of highly stable microwave signals. In addition, high-overtone bulk acoustic wave resonator also [...]

4H SiC APD Epitaxial Wafer *S

Weak ultraviolet light detection has important application prospects in fields such as fire warning, corona detection, and deep space detection. Avalanche photodiodes (APDs) have the advantages of high quantum efficiency, high gain, and ease of integration, making it more suitable for detecting ultraviolet light. In terms of materials, compared with Si, [...]

SiC Schottky Diode Epi Wafer

Silicon carbide (SiC) materials have significant advantages in key characteristics such as bandgap width and critical breakdown field strength, and can be used to make high voltage Schottky diodes. Currently, 650V-1700V SiC Schottky diodes are widely used in consumer, industrial, automotive and other fields. Schottky diode array based on SiC have [...]

Semiconductor Sensor Fabricated on SiC Epitaxial Wafer

Semiconductor sensor refers to a sensor made by utilizing various physical, chemical, and biological characteristics of semiconductor materials. The majority of the semiconductor materials used are silicon, as well as III-V and II-VI element compounds. The researchers used the excellent performance and availability of SiC wafers to develop SiC based [...]

Substrates for Silicon Rectifier Production

Rectifier is a controllable rectifier device based on controllable silicon (thyristor) and centered on intelligent digital control circuits, which converts AC to DC. It is abbreviated as silicon rectifier, also known as thyristor rectifier, thyristor rectifier, etc. Silicon rectifier advantages include high efficiency, no mechanical noise and wear, fast response speed, small size, [...]

Silicon PN Junction Wafer

The PN junction material has a single conductivity, which is a characteristic utilized by many devices in electronic technology, such as semiconductor diodes and bipolar transistors. PAM-XIAMEN can offer silicon PN junction wafers. Here we just list a specific epitaxial structure of photodiode application for your reference. More silicon epitaxial wafers please refer to 1. Silicon [...]