Semiconductor doping is a key process step in the production of integrated circuits. In the semiconductor production process, crystalline silicon is used as the substrate material of the wafer, and its electrical conductivity is very poor. Silicon becomes a useful semiconductor only when small amounts of impurities are added [...]
Why are the wafers provided by PAM-XIAMEN round? Because the manufacturing process determines that it is round. Take the production process of silicon wafers as an example: The purified high-purity polysilicon is spin-grown on a seed. After the polycrystalline silicon is melted, put it into a crucible (Quartz Crucible), [...]
Silicon-based devices are approaching physical limits, and compound semiconductors have broad prospects. Meanwhile, in some high-power, high-voltage, high-frequency, and high-temperature applications (such as new energy and 5G communications), the performance of silicon-based devices has gradually failed to meet the requirements. Due to the excellent performance of compound semiconductors represented [...]
As one of leading silicon carbide wafer manufacturers, PAM-XIAMEN offers you SiC substrate with 1mm or 2mm thickness. Silicon carbide (SiC) substrate is the cornerstone of the application of gallium nitride (GaN) and silicon carbide in the third generation of semiconductor materials. In recent years, with the maturity of the [...]
Epitaxial InGaAsP / InP photodiode wafer is offered for making InP-based optoelectronic devices. For such devices, InGaAsP quaternary material is commonly grown on InP substrate as ohmic contact layers. Quaternary InGaAsP thin film epitaxial on InP is sensitive to InP luminescence. InGaAsP / InP PIN photodiode structure can make [...]
PAM-XIAMEN can offer SiC substrate and epitaxy wafer for fabricating IGBT devices. The emergence of the third-generation wide-bandgap semiconductor SiC wafer has shown stronger competitiveness in the fields of high voltage, high temperature, and high power. The n-IGBT (insulated gate bipolar transistor) is further developed by growing n– and [...]
The SiC substrate and SiC homoepitaxy from PAM-XIAMEN can be provided for the fabrication of MOSFET devices. Silicon carbide (SiC) MOSFET structure is mainly manufactured by imitating the process of Si MOSFET structure. In terms of configuration, MOSFET structures are generally divided into two types: plane gate and groove [...]
The uncooled infrared (IR) focal plane detector is one detector that can work at room temperature without a refrigeration device, and has many advantages such as fast startup, low power consumption, small size, light weight, long life, and low cost. And the technology of microbolometers has overcome other types [...]
Indium antimonide (InSb) detector is sensitive for the mid-wave infrared (MWIR) band. In terms of mid-infrared detection in the 3-5um band, due to the advantages of mature material technology, high sensitivity and good stability, InSb detectors stand out from detectors based on other materials. At low temperature, InSb material [...]
SWIR (short wave infrared) detector is widely used in aerospace remote sensing, low-light night vision, medical diagnosis, agricultural industry, security monitoring and other fields. The short-wave infrared InGaAs detector has the characteristics of high detection rate, high uniformity and high stability, and is one of the ideal choices for [...]
