News

Study on Spontaneous Polarity Reversal Atomic Mechanism of AlN Grown on Sapphire

PAM-XIAMEN can offer sapphire based AlN template, more specifications please refer to https://www.powerwaywafer.com/2-inch-aluminum-nitride-aln-template-on-sapphire.html The interface is the foundation of device design and also the core of material growth control. In the 1980s, Japanese scientists achieved the epitaxy of nitride materials for the first time. However, for more than 30 years, there is still [...]

Research on 4H-SiC Based MEMS Pressure Sensors in Extreme Environments

In the fields of aerospace engines, geothermal development, and automotive electronics, there is a widespread demand for pressure measurement under extreme high temperature conditions. For a long time, silicon-based microelectromechanical systems (MEMS) pressure sensors have been widely used, with the advantages of miniaturization and high accuracy. However, the inherent [...]

Study on Diffusion Behavior of Transition Metals in SiC Wafer

PAM-XIAMEN can offer SiC wafers for researches on diffusion behavior of transition metals, additional specifications please refer to https://www.powerwaywafer.com/sic-wafer. Silicon carbide (SiC) is an important material for developing high-power, high-temperature resistant, and high-frequency switching devices due to its superior performance. In order to achieve high-performance devices, it is necessary to reduce defects [...]

Effect of Ultraviolet Radiation on Conductivity of AlN

PAM-XIAMEN can provide AlN substrates with various sizes, specifications can be found in https://www.powerwaywafer.com/aln-substrate.html. Aluminum nitride (AlN) has a 6.1eV ultra wide bandgap, which is attractive for manufacturing high-power and high-voltage electronic products, and also has the potential for deep ultraviolet optoelectronics in the wavelength range of about 200nm. However, broadband gap [...]

Bi/SiC Material System Promising for Quantum Spin Hall Effect

PAM-XIAMEN can offer SiC substrate for quantum spin hall effect researches, specifications please refer to https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. In quantum spin Hall (QSH) materials, the direction of electron spin is consistent with the direction of motion, making it promising for non dissipative spintronic devices. However, in the currently implemented QSH systems, the [...]

Silicon Carbide (SiC) Spin Quantum Bit Process

SiC wafers can be supplied for studying spin quantum bit, more sepcifications please found in https://www.powerwaywafer.com/sic-wafer. Quantum computers have the potential to solve some scientific problems that even top supercomputers cannot solve today, and quantum sensors may be able to measure signals that are difficult for the most sensitive sensors [...]

Optical Observation of Silicon Spin

PAM-XIAMEN is able to provide you with silicon wafers for optical studies, more please refer to https://www.powerwaywafer.com/silicon-wafer. The global quantum internet needs a long-life, telecom band photonic material interface that can be manufactured on a large scale. The preliminary quantum network based on photon matter interfaces that meet these subsets [...]

Study Spin Phonon Interactions in Silicon Carbide by Gaussian Acoustics

PAM-XIAMEN can offer SiC substrate for various researches, additional information can be found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Hybrid quantum systems can utilize quantum information for various forms of practice, such as quantum photons for long-distance transmission, spin behavior for information storage, and microwave superconducting circuits for computation. In hybrid quantum systems, the [...]

Study on Realize Ultra Efficient Laser Power Converter: SiC Based Multijunction Devices

SiC wafers can be offered for laser power converter researches, additional information please refer to https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Any questions please contact our sales team with victorchan@powerwaywafer.com. The current high-power laser transmission technology faces two major limitations in improving the efficiency of optoelectronic receivers: inherent entropy loss associated with low bandgap materials [...]

Research on Quantum Sensing of Nitrogen Vacancy Color Center RF Signal in SiC Material

4H-SiC wafers are available for nitrogen vacancy(NV) color center research. For more wafer information, please contact our sales team: victorchan@powerwaywafer.com 1. Backgroud for Quantum Sensing Research on 4H-SiC Quantum sensing technology, with its unique ability to utilize quantum mechanical properties such as quantum entanglement and quantum interference, has demonstrated its potential to [...]