PAM XIAMEN offers 2″ FZ Intrinsic Si Wafer DSP 2″ FZ Intrinsic Si Wafer DSP 2″ FZ (100) intrinsic, DSP wafer Si FZ (100) dia 2’’ x 280µm intrinsic R > 20,000 ohm.cm 2 sides polished with SEMI Std flats Roughness<0.5nm For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 2″ FZ Intrinsic Si Wafer SSP 2″ FZ Intrinsic Si Wafer SSP 2″ FZ (100) intrinsic, SSP wafer Si FZ (100) dia 2’’ x 280µm intrinsic R > 20,000 ohm.cm one side polished with SEMI Std flats Roughness<0.5nm For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 3″ CZ Si Lapped Wafer 3″ CZ Si Lapped Wafer N-type Resistivity6-10Ωcm Thickness180-185um Orientation <111> Double Side Lapped SEMI Flat For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″CZ Prime Silicon wafer-16 4″ CZ Silicon Wafer SSP Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, SEMI Flats (two), p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm, One-side-polished, back-side Alkaline etched, TTV<5μm, Bow/Warp<30μm, Wafers free of striation marks, Sealed in Empak or equivalent cassette. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″CZ Prime Silicon wafer-15 4″ CZ Silicon Wafer Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, SEMI Flats (two), p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, One-side-polished, back-side Alkaline etched, TTV<5μm, Bow/Warp<30μm, Wafers free of striation marks, Sealed in Empak or equivalent cassette. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 2.5″ PBN Heater 2.5″ PBN Heater. 1. Resistance: 22-35 ohm 2. Voltage: 180 V 3. Current: 15 A 4. Power: 2000 W For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN offers CZT Preamplifier. PAMMA-01A is a single channel CZT preamplifier. It featured low noise, high gain and charge sensitivity. Signals of semiconductor detectors and other detectors (scintillator, gas, etc.) could be readout by it. It can be used to test the energy spectrum of zinc cadmium telluride (CZT), silicon [...]
PAM-XIAMEN offers 650V GaN FETs Chip for Fast Charge The PAM65D150DNBI-TS eries 650V,150mΩ gallium nitride(GaN) FETs are normally-on devices.PAM-XIAMEN GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over Traditiona lsilicon(Si) devices. PAM-XIAMEN is a leading-edge wide bandgap supplier with [...]
What is the Key Parameters of SiC Epitaxial Wafer? The most basic and key parameters of SiC epitaxial materials are the thickness and doping concentration uniformity.In fact, the epitaxial parameters mainly depend on the device design. For example, the epitaxial parameters are different according to the different voltage levels of [...]
Why do We Need Silicon Carbide Epitaxial Wafer? Silicon carbide epitaxial wafer is a kind of silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on the silicon carbide substrate. In practical applications, almost all [...]
