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What is the Key Parameters of SiC Epitaxial Wafer?

What is the Key Parameters of SiC Epitaxial Wafer? The most basic and key parameters of SiC epitaxial materials are the thickness and doping concentration uniformity.In fact, the epitaxial parameters mainly depend on the device design. For example, the epitaxial parameters are different according to the different voltage levels of [...]

Why do We Need Silicon Carbide Epitaxial Wafer?

Why do We Need Silicon Carbide Epitaxial Wafer? Silicon carbide epitaxial wafer is a kind of silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on the silicon carbide substrate. In practical applications, almost all [...]

Phonon Properties of SiC Wafer

Phonon Properties of SiC Wafer Nanyang Technological University use our SiC wafer to research Phonon Properties. They research focused on the phonon properties of crystal. Different crystal structures have slight different phonon For more details, please refer to below publications: https://www.nature.com/articles/s41467-018-04168-x https://www.nature.com/articles/s41467-020-15767-y Resonant nanostructures for highly confined and ultra-sensitive surface phonon-polaritons | Nature Communications Plasmonics [...]

Low Temperature Grown InGaAs

Low Temperature Grown InGaAs  PAM-XIAMEN offer low temperature grown InGaAs on GaAs Substrate(LT-InGaAs) for InGaAs Photo Conductive antenna substrate for THz 2″ LT-InGaAs Wafer Specification Diameter(mm)Ф 50.8mm ± 1mm Thickness 0.5-3um Useable Surface Area≥90% Polishing: Single side polished Structure: LT-InGaAs on GaAs Substrate: GaAs substrate In composition from 0.05 to 0.40 We also can offer LT-GaAs(low temperature grown [...]

980 Single Mode Laser Chip

980 Single Mode Laser Chip (PAM200827-LD) PAM XIAMEN offers 980 Single Mode Laser Chip   Powerwaywafer 980 Single mode laser chip property Minimum Typical Maximum Central Wavelength 969 974 979 nm 970 980 990 Output Power (mW) 300 400 500 Working Mode CW — — — Longitudinal mode Single — — — Spectrum Width — — — Emitter Width  — — — Cavity Width (μm) 640 650 660 Cavity Length  (μm)  4490 4500 4510 Cavity Thickness  (μm) 115 125 135 Fast Axis Divergence(FWHM) 30 Deg — — — Slow Axis Divergence (FWHM) 14 Deg — — — Slope Efficiency 0.75 0.8 [...]

(20-2-1) Plane Si-GaN Freestanding GaN Substrate

(20-2-1) Plane Si-GaN Freestanding GaN Substrate PAM-XIAMEN offers (20-2-1) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-2-1)-SI Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room   For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

(20-2-1) Plane N-GaN Freestanding GaN Substrate

(20-2-1) Plane N-GaN Freestanding GaN Substrate PAM-XIAMEN offers (20-2-1) Plane N-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-2-1)-N Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room   For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

(20-2-1) Plane U-GaN Freestanding GaN Substrate

(20-2-1) Plane U-GaN Freestanding GaN Substrate PAM-XIAMEN offers (20-2-1) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-2-1)-U Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room   For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

Why do We Need High Purity Semi-insulating SiC Wafer?

Why do We Need High Purity Semi-insulating SiC Wafer? When SiC wafer is used as the substrate of RF devices, it is required that SiC should be semi insulating and its resistivity should be greater than 10 ^ 6 Ω· cm. In fact, the resistivity of silicon carbide should be [...]

HPSI SiC Wafer for Graphene Growth

HPSI SiC Wafer for Graphene Growth For Graphene Growth, HPSI SiC wafer need corresponding quality to make sure quality.100 mm diameter SiC substrates with the following technical requirements: 100% Semi-insulating SiC wafers of 100 mm diameter with minimum crystal defects,MPD<5/cm2 100% high-purity on-axis type single-crystal 4H-SiC(0001) with no intentional doping. Surface oriented [...]