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FZ Intrinsic undoped Silicon wafers

PAM XIAMEN offers FZ Intrinsic undoped Silicon wafers. Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]

3″ FZ Silicon Wafer Thickness:229-249μm -2

PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm. 3″ Si FZ Diameter 76-76.6mm Thickness 229-249μm Resistivity 53-60Ωcm TTV ≤10μm RRG ≤ 7% front and back sides acid etched about 1.5mil is etched from the surfaces in order to remove any surface damage 1.5mil = 1.5*25.4= 38.1μm 1.1 Wafers are to [...]

3″ FZ Silicon Wafer Thickness:229-249μm -1

PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm. 3″ Si FZ Diameter 76-76.6mm Thickness 229-249μm Resistivity 39-47Ωcm TTV ≤10μm RRG ≤ 7% about 1.5mil is etched from the surfaces in order to remove any surface damage 1.5mil = 1.5*25.4= 38.1μm 1.1 Wafers are to be cut from phosphorus doped N [...]

3″ Si wafer Thickness: 380±20μm

PAM XIAMEN offers 3″ Si wafer Thickness: 380±20μm. 3″ Si wafer with Thermal Oxide of thickness 1000A Diameter: 3″ Diameter: 76.2±0.3mm Thickness: 380±20μm Orientation: <100>±1° Type/dopant: N type/Phosphorus Resistivity: 1-20Ωcm Polishing: SSP Primary Flat 22.5±2.5mm, (110)±1° Surface roughness: <5A For more information, please visit our website: https://www.powerwaywafer.com, send us [...]

3″ Dummy grade silicon wafer Thickness:340-380μm

PAM XIAMEN offers 3″ Dummy grade silicon wafer Thickness:340-380μm. 3″ Dummy grade / Mechanical Grade silicon wafer, SSP. MUST be Single Side Polished and Single Crystal Silicon. Thickness 340-380μm, no scratch, no films, no etch patterns or residues For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

4″ Si wafer Thickness:500±20μm

PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm. 4″ Si wafer 4″ Si, N-type, <100>, SSP resistivity3000-4000Ωcm thickness500±20μm carrier lifetime>1ms(1000μm) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of [...]

Si wafer Thickness: 675 ± 25 um

PAM XIAMEN offers Si wafer Thickness: 675 ± 25 um. Si wafer Method: Cz Orientation: <111> Type: P-Type Dopant: Boron Resistivity: 0.1-13 ohm.cm Diameter: 150 ± 0.1 mm Thickness: 675 ± 25 um Chamfer Front side: Epi-ready Back side: etched BOW < 30um Warp < 30um For more information, [...]

2″ silicon wafers Thickness:1000 ±25μm

PAM XIAMEN offers 2″ silicon wafers Thickness:1000 ±25μm. 2’’ silicon wafers Ra < 4 nm (100) Thickness1000 ±25μm Doped (no requirement for resistivity and type, resistivity and type will be shown on test report when shipment) 2 sides polished With flat (SEMI STD) For more information, please visit our [...]

Silicon Wafer Thickness:1000μm

PAM XIAMEN offers Silicon Wafer Thickness:1000μm. Silicon Wafer ,6in Si Wafer,P/Boron <111> ON +-1°, 0.01-0.02 Ohm-cm, Thickness 1000μm, SSP, PRIME -Si Wafers, Single SidePolished/Etched Back, Primary Semi Std Flat, Surface Roughness <1nm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in [...]

Silicon Wafer Thickness:275+- 25µm

PAM XIAMEN offers Silicon Wafer Thickness:275+- 25µm. Silicon Wafer ,2in Si Wafer,P/Boron <111> ON +-1°, 0.01-0.02 Ohm-cm ,275+- 25µm Thickness,SSP, PRIME -Si Wafers,Single SidePolished/Etched Back, Primary Semi Std Flat, Surface Roughness <1nm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in [...]