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Metal Impurity Content Identified in Mono and Polycrystalline Silicon Crystals

The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and metal impurity such as iron, aluminum, copper, nickel, and titanium. Metal impurities generally exist in interstitial states, substitution states, complexes or precipitations in crystalline silicon, which often introduce additional electrons [...]

Electroluminescence Testing of GaAs LED Epitaxial Wafer

With the continuous progress of semiconductor technology, semiconductor devices such as LEDs, photovoltaic cells, semiconductor lasers, etc. have been widely used in people’s daily life and work. In order to ensure the quality and cost control in the production process of the semiconductor device, it is generally necessary to [...]

Why Do You Need Gallium Nitride (GaN) Semiconductor Wafers?

PAM-XIAMEN can supply GaN wafers for LD, LED, HEMT and other applications. You can click following links for more GaN wafer specifications: GaN based LED epitaxial wafer: https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html; GaN HEMT epitaxial wafer: https://www.powerwaywafer.com/gan-wafer/gan-hemt-epitaxial-wafer.html; Blue GaN LD wafer: https://www.powerwaywafer.com/blue-gan-ld-wafer.html. Why you need to choose GaN wafers for power devices? The short video: https://youtu.be/5Uk9HVzQWAc explains why, as follows:  GaN is [...]

Silicon Wafer Flatness Measurement – Criterion

PAM-XIAMEN can supply silicon wafers to meet your application demands, more wafer specifications please visit: https://www.powerwaywafer.com/silicon-wafer. The purity, surface flatness, cleanliness and impurity contamination of semiconductor silicon wafers have an extremely important influence on the chips. The local flatness of silicon wafer is one of the important parameters that directly [...]

4H-SiC Seed Crystal

Due to the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, SiC material can meet the new requirements of modern electronic technology for high temperature, high frequency, high power, high voltage and radiation resistance, so it is regarded as [...]

Magnetic Czochralski (MCZ) Method

At present, silicon materials still occupy a major position in the field of semiconductors and solar energy. With the development of science and technology, the production process of integrated circuits and solar cells has put forward new requirements for silicon materials. The growth technology of large-diameter and high-quality silicon [...]

Non-Contact Optical Measurement for Detecting Film Thickness

For the produced thin film, among its many properties, the thickness and uniformity of the film are the most critical parameters. Therefore, monitoring and controlling the thickness and uniformity of thin films has become an important and indispensable part of industrial production. If you need it, PAM-XIAMEN can supply [...]

Epitaxial Thin Film of Silicon Carbide (SiC) for Detectors

SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature environment, reactor power monitoring, radiation [...]

Epitaxy Wafer of Silicon for Integrated Waveguide Optics

PAM-XIAMEN can offer epitaxy wafer of silicon for manufacturing integrated optical waveguide devices. The silicon epi wafer we offer is grown core layer of Si and lower cladding layer of SiO2 on Si substrate and the waveguide structure is ridged. Due to the large refractive index difference between Si [...]