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Electronic and magnetic properties GaN/MnN/GaN and MnN/GaN/MnN interlayers

In this work we execute computational calculations to investigate the structural, electronic and magnetic properties of the GaN/MnN/GaN and MnN/GaN/MnN interlayers. The calculations were carried out by a method based on pseudopotentials, as implemented in the Quantum ESPRESSO code. For the description of the electron-electron interaction, generalized gradient approximation [...]

N Type GaN

2″GaN Free-standing Substrate Item      PAM-FS-GaN50-N Conduction Type N-type Size 2″(50.8)+/-1mm Thickness 300+/-25um Orientation C-axis(0001)+/-0.5o Primary Flat Location (1-100)+/-0.5o Primary Flat Length 16+/-1mm Secondary Flat Location (11-20)+/-3o Secondary Flat Length 8+/-1mm Resistivity(300K) <0.5Ω·cm Dislocation Density <5×106cm-2 Marco Defect Density A grade<=2cm-2 B grade>2cm-2 TTV <=15um BOW <=20um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished                                                                                                            Back Surface:1.Fine ground                                             [...]

Nitride Semiconductor Wafer

Nitride Semiconductor Wafer  Free-standing Gallium Nitride  Item No. Type Orientation Thickness Grade Micro Defect Density Surface Usable area          N-Type   PAM-FS-GaN50-N 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN45-N dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN40-N dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN38-N dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN25-N dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN15-N 14mm*15mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN10-N 10mm*10.5mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN5-N 5mm*5.5mm, N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% SEMI-INSULATING   PAM-FS-GaN50-SI SI 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN45-SI dia.45mm,SI 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN40-SI dia.40mm,SI 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN38-SI dia.38mm,SI 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN25-SI dia.25.4mm,SI 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN15-SI 14mm*15mm,SI 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90%  PAM-FS-GaN10-SI 10mm*10.5mm,SI 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or [...]

GaN substrate

What we provide: Item undoped N- Si doped N+ Semi-insulating P+ Freestanding GaN substrate yes yes yes GaN on sapphire yes yes yes yes InGaN on sapphire yes *** AlN on sapphire yes LED wafer (p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire) Freestanding GaN substrate/GaN on sapphire/LED wafer:   For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer: http://www.qualitymaterial.net/products_7.html   InGaN on Sapphire:   For specification of InGaN on sapphire template, pleas view InGaN substrate: https://www.powerwaywafer.com/InGaN-Substrates.html   AlN on Sapphire:   For specification of AlN on sapphire [...]

4″ FZ Prime Silicon Wafer-6

PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6 Substrate Monocrystalline Silicon Diameter 100 ±0.3mm Growth method Fz Lifetime>1000µsec Thickness 600± 25µm Type/DopantN/Phosphorus Orientation[110]±0.5° Resistivity>5,000 Ωcm TTV<10µm Bow/Warp<40µm Primary Flat Location@[111]±<0.25° Primary Flat Length 32.5± 2.5mm Secondary Flat Location@[111]70.5° CW from primary flat Front side finishMirror Polish Edge rounded per SEMI standard *Exception: No edge round on primary flat* Back side finish Mirror Polish Packaging Empak cassette Option Laser Serialized: [...]

6″ CZ Prime Wafer 1

PAM XIAMEN offers6″ CZ Prime Wafer 1 6 inch Prime CZ-Si wafer 6 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.5μm, <qty300 ttv ≤ 10um,warp ≤30um One side sputtering Cr/Au Layer with the thickness 10nm/50nm For more information, [...]

4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3

PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um,warp ≤30um One side sputtering Cr/Au Layer with [...]

8″ Silicon Wafer-3

PAM XIAMEN offers8″ Silicon Wafer-3 Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Notch SEMI STD Chamfer width 250-350μm Orientation – (100)±0.5 single sided polishing For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com With more than 25+years experiences in compound semiconductor material field and export business, our team can [...]

6″ FZ Silicon Wafer-5

PAM XIAMEN offers6″ FZ Silicon Wafer-5 Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on the back side: all none, SEMI [...]

4″CZ Prime Silicon Wafer-3

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-3 Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]