1-4.Density
1-4.Density The mass density or density of a material is its mass per unit volume. The symbol most often used for density is ρ (the lower case Greek letter rho). Mathematically, density is defined as mass divided by volume:
1-4.Density The mass density or density of a material is its mass per unit volume. The symbol most often used for density is ρ (the lower case Greek letter rho). Mathematically, density is defined as mass divided by volume:
1-5.Thermal Expansion Coefficient Thermal expansion is the tendency of matter to change in volume in response to a change in temperature. When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are rare; this effect is limited [...]
In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium. Refractive index is the basic property of optical crystals, and it is an important parameter to study the properties of [...]
In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (in electron volts) between [...]
1-8.Electrical Breakdown The term electrical breakdown or electric breakdown has several similar but distinctly different meanings. For example, the term can apply to the failure of an electric circuit. Alternatively, it may refer to a rapid reduction in the resistance of an electrical insulator that can lead to aspark jumping [...]
Q:We request for the following items 1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm 2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm A:Yes, we could supply based [...]
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A: Sure, no problem
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC? A: For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing? A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below 450W/mK, which are lower the [...]
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