Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?
Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.
For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible?
Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible? A:Yes, it is no problem, some clients bought our wafers for LLO.
Do these 2” PSS LED wafers have the same epi-stack as the 4” PSS? If not, please send me the diagram with thicknesses. Wavelength can be same: central 455nm
Q:Do these 2” PSS LED wafers have the same epi-stack as the 4” PSS? If not, please send me the diagram with thicknesses. Wavelength can be same: central 455nm A: the 2″ detail layer thickness and structure is same as 4″, no any difference. Wavelength:455nm+/-5nm is no problem.
I am not sure whether practically LLO can be done on the PSS given it is not a flat surface
Q: I am not sure whether practically LLO can be done on the PSS given it is not a flat surface A: “laser lift-off” actually is according to “NL layer” as below image. If the NL layer is GaN layer, when it is heating to constant high temperature, the GaN is decomposed into [...]
For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of pss?
Q:For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of pss? A: 4″LED wafer on pps [...]
Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation?
Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!
The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to the picture in your email?
Q: The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to the picture in your email? A:Please [...]
Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project.
Q: Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A: Sorry, we can not offer fabrication of p and n metal contacts, [...]
Progress in bulk GaN growth
Progress in bulk GaN growth* Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms [...]
Silicon Carbide List
Silicon Carbide List 4″ 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-100-N-SIC-350-A 4″ 4H-N 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-100-N-SIC-350-B 4″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-100-N-SIC-350-D 4″ 4H-N 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% S4H-100-N-SIC-370-L 4″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-100-N-SIC-440-AC 4″ 4H-N 0°/4°±0.5° 440±25um D * As-cut >75% S4H-100-N-SIC-C0510-AC-D 4″ 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4″ 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * 3″ 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-76-N-SIC-350-A 3″ 4H-N 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-76-N-SIC-350-B 3″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-N-SIC-350-D 3″ 4H-N 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% S4H-76-N-SIC-370-L 3″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-76-N-SIC-410-AC 3″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-76-N-SIC-C0510-AC-D 3″ 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-76-N-SIC-C1015-AC-D 3″ 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S4H-76-N-SIC-C0510-AC-C 3″ 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S4H-76-N-SIC-C1015-AC-C 3″ 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * SEMI-INSULATING S4H-76-SI-SIC-350-A 3″ 4H-SI 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-76-SI-SIC-350-B 3″ 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-SI-SIC-350-D 3″ 4H-SI 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% 2″ 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S4H-51-N-SIC-330-A 2″ 4H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S4H-51-N-SIC-330-B 2″ 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S4H-51-N-SIC-330-D 2″ 4H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S4H-51-N-SIC-370-L 2″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-51-N-SIC-410-AC 2″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-51-N-SIC-C0510-AC-D 2″ 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-51-N-SIC-C1015-AC-D 2″ 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S4H-51-N-SIC-C0510-AC-C 2″ 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S4H-51-N-SIC-C1015-AC-C 2″ 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * 2″ 6H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area N-Type S6H-51-N-SIC-330-A 2″ 6H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S6H-51-N-SIC-330-B 2″ 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-N-SIC-330-D 2″ 6H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S6H-51-N-SIC-370-L 2″ 6H-N 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-N-SIC-410-AC 2″ 6H-N 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-N-SIC-C0510-AC-D 2″ 6H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S6H-51-N-SIC-C1015-AC-D 2″ 6H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S6H-51-N-SIC-C0510-AC-C 2″ 6H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S6H-51-N-SIC-C1015-AC-C 2″ 6H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * SEMI-INSULATING S6H-51-SI-SIC-330-A 2″ 6H-SI 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S6H-51-SI-SIC-330-B 2″ 6H-SI 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-SI-SIC-330-D 2″ 6H-SI 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S6H-51-SI-SIC-370-L 2″ 6H-SI 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-SI-SIC-410-AC 2″ 6H-SI 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-SI-SIC-C0510-AC-D 2″ 6H-SI 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S6H-51-SI-SIC-C1015-AC-D 2″ 6H-SI 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * Please see below sub-catalogue: 6H n type SiC 4H N Type SiC 4H Semi-insulating SiC SiC Ingots Lapped Wafers Polishing Wafer As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team. Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.