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P Type GaN Template

P Type GaN Template PAM-XIAMEN Offers p type GaN Template Published on December,27, 2012 Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template. “Now we can offer wide range nitirde semiconductor materials,including GaN, InGaN, [...]

GaN-On-Si Key Patent Analysis

GaN-On-Si Key Patent Analysis   The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has commonly used in the semi-conductor [...]

Light-emitting InGaN/GaN Heterojunction Bipolar Transistors

Light-emitting InGaN/GaN Heterojunction Bipolar Transistors   The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor depositionon sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm2 emitter device demonstrates a current gain β = ΔIC/ΔIB = 49 at 3 mA and breakdown [...]

PAM-XIAMEN Offers InGaN Substrates

PAM-XIAMEN Offers InGaN Substrates Published by PAM-XIAMEN Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces availability of InGaN substrate materials. InGaN is the key compound semiconductor material used for the fabrication of blue, green, and white light emitting diodes (LEDs),GaN-based [...]

AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs

AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs   GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched on GaAs substrates. We observe [...]

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on performance gains, reckons [...]

In Q4 Discount prices for Universities and Research Institutes

In Q4 Discount prices for Universities and Research Institutes We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s stock, currently stock size: 5mm*5.5mm, [...]

Bulk GaN Crystals Grown by HVPE

Bulk GaN Crystal Grown by HVPE We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor deposition on (0 0 0 [...]

Global and China GaAs-based Device Market

Global and China GaAs-based Device Market   Distinct from traditional silicon semiconductor, gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V semiconductor and is mainly used in handset RF front end like power amplifier (PA). In the 4G era, handset RF front end becomes [...]