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A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0)

Highlights •Novel growth strategy of GaAs on Si(1 0 0) with AlAs/GaAs strain layer superlattice. •Emphasis on understanding the inconclusive crystalline morphology at initial layers. •Observed low TD in HRTEM and low RMS in AFM. •Observed fourth order of superlattice peaks in ω–2θ scan in HRXRD. •SAEDP shows fcc lattice and RSM study proves [...]

Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of

Highlights •The thickness of graphene grown on SiC was determined by AES depth profiling. •The AES depth profiling verified the presence of buffer layer on SiC. •The presence of unsaturated Si bonds in the buffer layer has been shown. •Using multipoint analysis thickness distribution of the graphene on the wafer was determined. Auger electron [...]

Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region

Highlights •AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation. •The depletion region of structure is amended using a multiple recessed gate. •A gate structure is proposed to be able to control the thickness of the channel. •RF parameters are considered and are improved. In this paper, a high performance AlGaN/GaN [...]

Barrier controlled carrier trapping of extended defects in CdZnTe detector

Highlights •The barrier controlled trapping model was developed around extended defects. •Electron mobility and E-field distribution were distorted by space charge depletion region. •Extended defects act as a recombination-activated region. •The relationships between extended defects and detector performance were established. Transient current techniques using alpha particle source were utilized to study the influence of [...]

Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

Highlights •We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes. •We examine impact of temperature on the electrical parameters of fabricated devices. •The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V. •The SD-HEMTs are characterized by lower increase of Ron with increasing temperature. Abstract In this work [...]

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching Highlights •Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. •InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. •Overgrown GaN films and LEDs showed [...]

Plastically deformed Ge-crystal wafers as elements for neutron focusing monochromator

Plastically deformed Ge-crystal wafers that have the cylindrical shape with a large curvature were characterized by neutron diffraction. The box-type rocking curve of Bragg reflection with the angular width of Γbox≃2° in FWHM, which is observable in the monochromatic neutron diffraction, results in an enhancement in the angle-integrated intensity (Iθ). Besides,Iθ efficiently [...]

High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range

High-power broad-area InGaNAs/GaAs quantum-well (QW) edge-emitting lasers on GaAs substrates in the 1200 nm range are reported. The epitaxial layers of the InGaNAs/GaAs QW laser wafers were grown on n+-GaAs substrates by using metal-organic chemical vapor deposition (MOCVD). The thickness of the InGaNAs/GaAs QW layers is 70 Å/1200 Å. The indium content [...]