Abstract Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the factories. Techniques covered include luminescence imaging, [...]
Abstract Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the factories. Techniques covered include luminescence imaging, [...]
Silicon Carbide Circuits on the Way Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide as a promising alternative in [...]
CdZnTe monocrystalline wafers Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy. And now PAM-XIAMEN offer specification as follows: S.No. Parameters Detail 1 Undoped Cd1_xZnxTe Single crystal substrates From wafer to wafer x =0.040± 0.005 On one wafer x =0.040± 0.005 (Twin & micro twins free substrates) 2 Substrates Sizes & Quantity 15mm X [...]
Xiamen Powerway Advanced Material Co.,Ltd. offers monocrystal or polycrystalline150mm Germanium (100) or (111) substrates for optical application or for epi-growth in microelectronics. You can buy germanium substrate in following specifications: 1. Gemanium Substrate Specifications No.1 Optically Polished Germanium Substrates PAM211025-GE Sl No’ Specifications Value 1 Material Germanium (Ge) Optical grade 2 Crystalline form Polycrystalline / Monocrystalline 3 Shape Circular Flat 4 Diameter 25 mm +0.0 / -0.10 mm 5 Thickness 2 mm [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″/4” size AlGaN–GaN HEMTs Grown on Sapphire Substrates,which is on mass production in 2012. And now PAM-XIAMEN [...]
Hybrid Chips of Gallium Nitride and Silicon Researchers at MIT say they’ve made a big step toward combining the capabilities of the silicon used in computer chips with properties of the compound semiconductors found in lasers and high-powered electronics. In the October issue of IEEE Electron Device Letters, they report having [...]
Computer modeling of surface interactions and contamin Highlights • Dynamics of contaminant removal from the surface of micro/nanotrench is simulated. • The trench is rectangular and made of one or two different materials. • Various diffusivities and surface characteristics are considered in the model. • In multimaterial trench, cleaning dynamics strongly depends on stacking order. • Dynamics has two regimes [...]
Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had a 1-mm-thick LT GaAs layer [...]
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie,including Si-doped GaN Epitaxial template on sapphire: GaN Template2″ Specification Purity Si-doped GaN Epitaxial template on sapphire Orientation -1 Film thickness >5.0µm ± 0.25µm Diameter 50.8 ± 0.1mm Edge exclusion <1mm Useable surface area > 90% Conduction Type N-Type Resisitivity 0.001 – 0.01 Ohm-cm Carrier Concentration 1E19 /cc Macro [...]
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