News

Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion [...]

(Al,In)GaN laser diodes with optimized ridge structures

(Al,In)GaN laser diodes with optimized ridge structures   We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 nm to 425 nm. Using [...]

GaN Substrates Offer High Performance At A Price

GaN Substrates Offer High Performance At A Price   GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to market research firm Strategies Unlimited. [...]

Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields

Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields   We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated [...]

Getting to 450 mm Wafer Soone

Getting to 450 mm Wafer Sooner   As device circuits continue to get smaller, the wafers that they are made from are getting larger — again. A few years ago device manufacturers — both vertically integrated companies and independent foundries — pushed maximum wafer diameters from 200 mm to 300 mm. [...]

SiC and GaN Wide Bandgap Device Technology

SiC and GaN Wide Bandgap Device Technology Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial systems. SiC MESFETs currently achieve power densities of 4.0 W/mm with power added efficiencies in excess of 60% on a repeatable basis. They are commercially available in packaged or die [...]

Highly selective PEC etching of gallium nitride device structures

Highly selective PEC etching of gallium nitride device structures   Photoelectrochemical (PEC) wet etching is an attractive wet etch approach for III-Nitride materials. Compared to dry etch techniques normally applied in prevalent GaN device fabrications, PEC wet etching can provide low damage, selective etching and understanding of material defects. This dissertation [...]

Nichia Develops Higher Power Green Laser Diodes

Nichia Develops Higher Power Green Laser Diodes   CompoundSemi News Staff November 23, 2012…Nichia Corporation reports that it has successfully developed a high-power pure green laser diode which has optical output power higher than 1W with 525nm lasing wavelength. Nichia says that the laser will be applied to display applications such as [...]