PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal.
Crystal
Structure /Lattice Constant(A)
MP oC
Density, g/cm3
Growth Tech
DyScO3
Orthorombic a=5.44 b=5.71 c=7.89
2127
6.9
CZ
GdScO3
Orthorombic a=5.45 b=5.75 c=7.93
2127
6.6
CZ
TbScO3
Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147
2127
6.6
CZ
DyScO3
DyScO3 (110) 5x5x0.5mm 1sp”
DyScO3 (110) 5x5x0.5mm 2sp
DyScO3 (110) 10x10x0.5mm 1sp
DyScO3 (110) 10x10x0.5mm 2sp
DyScO3 (001) 10x10x0.5mm 1sp
DyScO3 (001) 10x10x0.5mm [...]
2019-05-20meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
381
P/E
0.085-0.115
SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers
p-type Si:B
[110] ±0.3°
3″
381
P/E
0.0448-0.0672
SEMI Prime, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst
p-type Si:B
[110] [...]
2019-03-06meta-author
PAM XIAMEN offers Single crystal KTaO3.
KTaO3 (100) 5x5x0.5 mm, 2sp
KTaO3, (100), 10 x 5 x 0.5mm, 1sp
KTaO3, (100), 10 x 5 x 0.5mm, 2sp
KTaO3, (100), 5 x 5 x 0.5mm, 1sp
KTaO3, (110), 5 x 5 x 0.5mm, 1sp
KTaO3, [...]
2019-05-07meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3197
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3198
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3199
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3200
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3201
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3202
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3203
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3204
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3205
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-15meta-author
Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation
Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans [...]
(Al,In)GaN laser diodes with optimized ridge structures
We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 [...]
2013-03-27meta-author