PAM XIAMEN offers Fe2O3 crystal .
Alpha-Fe2O3 Crystal (0001) < 0.4deg, Edge oriented, 5x5x1.0mm,1SP
Specifications:
Crystal: Alpha-Fe2O3 natural source with defects
Purity: >99.95%
Size: [...]
2019-04-19meta-author
PAM XIAMEN offers Thermal Oxide Wafer.
Thermal Oxide Wafer 2″ Dia.
Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2″ dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si [...]
2019-04-29meta-author
PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Growth method
Czochralski method
Unit cell constant
a=3.756Å c=12.63 Å
Melt point(℃)
1650
Density
5.92(g/cm3)
Hardness
6-6.5(mohs)
Dielectric constants
ε=16.8
Size
10×3,10×5,10×10,15×15,20×15,20×20
Ф15, [...]
2019-03-14meta-author
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices
The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic [...]
2017-09-27meta-author
GaN-on-Si blue/white LEDs: epitaxy, chip, and package
The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet [...]
2018-04-13meta-author
GaAs epi wafer for microelectronic and optoelectronic devices
PAM XIAMEN offers GaAs epi wafer for microelectronic and optoelectronic devices including MESFET HEMT, ICMMIC HBT, HALL device, visible light LED, IR LED, LD and solar cell.
Electronic devices
Material(layer/substrate)
Application
Technology Tends
Material Required
Digital IC
(MESFETHEMT)
GaAs/GaAs
GaAlAs/GaAs
Ultra-high-speed computers
PC,ATM,Image Processing
High level [...]
2019-03-15meta-author