| Nitride Semiconductor Wafer | |||||||
| Free-standing Gallium Nitride | |||||||
| Item No. | Type | Orientation | Thickness | Grade | Micro Defect Density | Surface | Usable area |
| N-Type | |||||||
| PAM-FS-GaN50-N | 2″ N type | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN45-N | dia.45mm,N type | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN40-N | dia.40mm,N type | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN38-N | dia.38mm,N type | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN25-N | dia.25.4mm,N type | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN15-N | 14mm*15mm,N type | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN10-N | 10mm*10.5mm,N type | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN5-N | 5mm*5.5mm, N type | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| SEMI-INSULATING | |||||||
| PAM-FS-GaN50-SI | SI | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN45-SI | dia.45mm,SI | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN40-SI | dia.40mm,SI | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN38-SI | dia.38mm,SI | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN25-SI | dia.25.4mm,SI | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN15-SI | 14mm*15mm,SI | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN10-SI | 10mm*10.5mm,SI | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| PAM-FS-GaN5-SI | 5mm*5.5mm, SI | 0°±0.5° | 300±25um | A/B | 0/<2/cm2 | P/P or P/L | >90% |
| Gallium Nitride Template,AlN template,InGaN template,AlGaN template | |||||||
| Item No. | Type | Orientation | Thickness | Grade | Dislocation Density | Surface | Usable area |
| PAM-76-GaN-T-N | GaN template,N type | 0°±0.5° | 20/30/40um | / | <1×10^8/cm2 | P/P or P/L | >90% |
| PAM-50-GaN-T-N | GaN template,N type | 0°±0.5° | 20/30/40um | / | <1×10^8/cm2 | P/P or P/L | >90% |
| PAM-50-GaN-T-P | GaN template,P type | 0°±0.5° | 2um | / | / | P/P or P/L | >91% |
| PAM-50-GaN-T-SI | GaN template,Semi-insulating | 0°±0.5° | 30/90um | / | <1×10^8/cm2 | P/P or P/L | >90% |
| PAM-50-AlN-T-SI | AlN template,Semi-insulating | 0°±0.5° | 1um | / | / | P/P or P/L | >90% |
| PAM-50-INGaN-T-SI | InGaN template | 0°±0.5° | 100-200nm | / | 10^8/cm2 | P/P or P/L | >90% |
| PAM-50-AlGaN-T-SI | AlGaN template | 0°±0.5° | 1-5um | / | * | P/P or P/L | >90% |
| Gallium Nitride Epi Wafer (LED Wafer) | |||||||
| Item No. | Type | Orientation | Thickness | Grade | Wavelength | Surface | Usable area |
| N-Type | |||||||
| PAM-50-GaN-EPI- BLUE-F | / | 0°±0.5° | 436um | / | 445-475nm | P/L | >90% |
| PAM-50-GaN-EPI-BLUE-PSS | / | 0°±0.5° | 436um | / | 445-475nm | P/L | >90% |
| PAM-50-GaN-EPI-GREEN-F | / | 0°±0.5° | 436um | / | 510-530nm | P/L | >90% |
| PAM-50-GaN-EPI-GREEN-PSS | / | 0°±0.5° | 436um | / | 510-530nm | P/L | >90% |
| Gallium Nitride UV LED | |||||||
| Item No. | PKG | Output Power | Forward Voltage | Grade | Wavelength | Deg. | FWHM |
| PAM-GaN-LED-UV-265 | 03WG/SMD/TO39 | / | / | / | 265nm+/-3nm | / | 10nm |
| PAM-GaN-LED-UV-280 | 03WG/SMD/TO39 | / | 6.8-7.5 | / | 280nm+/-3nm | 140/60 | 10nm |
| PAM-GaN-LED-UV-310 | 03WG/SMD/TO39 | / | 6.5-7.2 | / | 310nm+/-3nm | 140/60 | 10nm |
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