Nitride Semiconductor Wafer

Nitride Semiconductor Wafer

Free-standing Gallium Nitride

 

 Item No.

Type

Orientation

Thickness  

Grade

Micro Defect Density

Surface

Usable area

 

　

         N-Type 

 

 PAM-FS-GaN50-N

2″ N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN45-N

dia.45mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN40-N

dia.40mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN38-N

dia.38mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN25-N

dia.25.4mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN15-N

14mm*15mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN10-N

10mm*10.5mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN5-N

5mm*5.5mm, N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 

SEMI-INSULATING 

 

 PAM-FS-GaN50-SI

2″ N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN45-SI

dia.45mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN40-SI

dia.40mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN38-SI

dia.38mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN25-SI

dia.25.4mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN15-SI

14mm*15mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN10-SI

10mm*10.5mm,N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 PAM-FS-GaN5-SI

5mm*5.5mm, N type

0°±0.5°

300±25um

A/B

0/<2/cm2

P/P or P/L

>90%

 

 Gallium Nitride Template,AlN template,InGaN template,AlGaN template

 

 Item No.

Type

Orientation

Thickness  

Grade

Dislocation Density

Surface

Usable area

 

 PAM-76-GaN-T-N

GaN template,N type

0°±0.5°

20/30/40um

/

<1×10^8/cm2

P/P or P/L

>90%

 

 PAM-50-GaN-T-N

GaN template,N type

0°±0.5°

20/30/40um

/

<1×10^8/cm2

P/P or P/L

>90%

 

 PAM-50-GaN-T-P

GaN template,P type

0°±0.5°

2um

/

/

P/P or P/L

>91%

 

 PAM-50-GaN-T-SI

GaN template,Semi-insulating

0°±0.5°

30/90um

/

<1×10^8/cm2

P/P or P/L

>90%

 

 PAM-50-AlN-T-SI

AlN template,Semi-insulating

0°±0.5°

1um

/

 /

P/P or P/L

>90%

 

 PAM-50-INGaN-T-SI

InGaN template

0°±0.5°

100-200nm

/

10^8/cm2

P/P or P/L

>90%

 

 PAM-50-AlGaN-T-SI

AlGaN template

0°±0.5°

1-5um

/

*

P/P or P/L

>90%

 

Gallium Nitride Epi Wafer (LED Wafer)

 

 Item No.

Type

Orientation

Thickness  

Grade

Wavelength

Surface

Usable area

 

　

N-Type 

 

 PAM-50-GaN-EPI- BLUE-F

/

0°±0.5°

436um

/

445-475nm

P/L

>90%

 

 PAM-50-GaN-EPI-BLUE-PSS

/

0°±0.5°

436um

/

445-475nm

P/L

>90%

 

 PAM-50-GaN-EPI-GREEN-F

/

0°±0.5°

436um

/

510-530nm

P/L

>90%

 

 PAM-50-GaN-EPI-GREEN-PSS

/

0°±0.5°

436um

/

510-530nm

P/L

>90%

 

 Gallium Nitride UV LED 

 

 Item No.

PKG

Output Power

Forward Voltage

Grade

Wavelength

Deg.

FWHM

 

 PAM-GaN-LED-UV-265

03WG/SMD/TO39

/

/

/

265nm+/-3nm

/

10nm

 

 PAM-GaN-LED-UV-280

03WG/SMD/TO39

/

6.8-7.5

/

280nm+/-3nm

140/60

10nm

 

 PAM-GaN-LED-UV-310

03WG/SMD/TO39

/

6.5-7.2

/

310nm+/-3nm

140/60

10nm

As a GaN wafer supplier,we offer gallium semiconductor list for your reference, if you need price detail, please contact our sales team

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

FREE STANDING GAN SINGLE CRYSTAL SUBSTRATES

GAN HEMT EPITAXIAL WAFERS (GAN EPI-WAFERS)

2018-05-23

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2019-11-27meta-author
Silicon Carbide List

Silicon Carbide List   4″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　  N-Type  S4H-100-N-SIC-350-A 4″ 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-100-N-SIC-350-B 4″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-100-N-SIC-350-D 4″ 4H-N 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% S4H-100-N-SIC-370-L 4″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-100-N-SIC-440-AC 4″ 4H-N 0°/4°±0.5° 440±25um D * As-cut >75% S4H-100-N-SIC-C0510-AC-D 4″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * 3″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　          N-Type  S4H-76-N-SIC-350-A 3″ 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-76-N-SIC-350-B 3″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-N-SIC-350-D 3″ 4H-N 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% S4H-76-N-SIC-370-L 3″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-76-N-SIC-410-AC 3″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-76-N-SIC-C0510-AC-D 3″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-76-N-SIC-C1015-AC-D 3″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S4H-76-N-SIC-C0510-AC-C 3″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S4H-76-N-SIC-C1015-AC-C 3″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 　 SEMI-INSULATING  S4H-76-SI-SIC-350-A 3″ 4H-SI 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-76-SI-SIC-350-B 3″ 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-SI-SIC-350-D 3″ 4H-SI 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% 2″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　 N-Type  S4H-51-N-SIC-330-A 2″ 4H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S4H-51-N-SIC-330-B 2″ 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S4H-51-N-SIC-330-D 2″ 4H-N 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S4H-51-N-SIC-370-L 2″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-51-N-SIC-410-AC 2″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-51-N-SIC-C0510-AC-D 2″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-51-N-SIC-C1015-AC-D 2″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S4H-51-N-SIC-C0510-AC-C 2″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S4H-51-N-SIC-C1015-AC-C 2″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 2″ 6H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　 N-Type  S6H-51-N-SIC-330-A 2″ 6H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S6H-51-N-SIC-330-B 2″ 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-N-SIC-330-D 2″ 6H-N 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S6H-51-N-SIC-370-L 2″ 6H-N 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-N-SIC-410-AC 2″ 6H-N 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-N-SIC-C0510-AC-D 2″ 6H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S6H-51-N-SIC-C1015-AC-D 2″ 6H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S6H-51-N-SIC-C0510-AC-C 2″ 6H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S6H-51-N-SIC-C1015-AC-C 2″ 6H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 　 SEMI-INSULATING  S6H-51-SI-SIC-330-A 2″ 6H-SI 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S6H-51-SI-SIC-330-B 2″ 6H-SI 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-SI-SIC-330-D 2″ 6H-SI 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S6H-51-SI-SIC-370-L 2″ 6H-SI 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-SI-SIC-410-AC 2″ 6H-SI 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-SI-SIC-C0510-AC-D 2″ 6H-SI 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S6H-51-SI-SIC-C1015-AC-D 2″ 6H-SI 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * Please see below sub-catalogue: 6H n type SiC 4H N Type SiC 4H Semi-insulating SiC SiC Ingots Lapped Wafers Polishing Wafer As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team. Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.  

2018-05-23meta-author
Silicon Nitride Wafer Si3N4 Thin Film By LPCVD

Silicon Nitride Wafer Si3N4 Thin Film By LPCVD In Stock, But Not Limited To The Following. Wafer No. Wafer Size Polished-Side Type/Orientation Si3N4 Thickness Wafer Thickness(um) Resistivity(Ohm.Cm) Quantity(Pcs) PAM-XIAMEN-WAFER-#N1 2″ DSP, both Si3N4 N100 200nm 400±15 3-6 25 PAM-XIAMEN-WAFER-#N2 2″ SSP,both Si3N4 P100 200nm 400±15 <0.0015 24 PAM-XIAMEN-WAFER-#N3 2″ Si3N4 with Cu 48.8*3mm — — — 1 PAM-XIAMEN-WAFER-#N4 3″ DSP, both Si3N4 — 150nm — — 2 PAM-XIAMEN-WAFER-#N5 4″ SSP,both Si3N4 N100 40nm 500±10 <0.02 2 PAM-XIAMEN-WAFER-#N6 4″ DSP, both Si3N4 N100 50nm 510-540 2-4 9 PAM-XIAMEN-WAFER-#N7 4″ DSP, both Si3N4 P type 50nm 200±10 <0.02 5 PAM-XIAMEN-WAFER-#N8 4″ SSP,both Si3N4 N100 95nm 525±15 1-10 22 PAM-XIAMEN-WAFER-#N9 4″ SSP,both Si3N4 N100 100nm 500±10 <0.05 7 PAM-XIAMEN-WAFER-#N10 4″ DSP, both Si3N4 P100 200±20nm 300±10 5-10 50 PAM-XIAMEN-WAFER-#N11 4″ DSP, both Si3N4 N100 100nm 200±15 1-15 19 PAM-XIAMEN-WAFER-#N12 4″ DSP, both Si3N4 P100 150nm 500±25 10-20 1 PAM-XIAMEN-WAFER-#N13 4″ SSP,both Si3N4 P100 200nm 525±25 10-20 25 PAM-XIAMEN-WAFER-#N14 4″ SSP,both Si3N4 P type 200nm 500±10 <0.05 15 PAM-XIAMEN-WAFER-#N15 4″ DSP, both [...]

2019-11-27meta-author