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Free-standing Gallium Nitride |
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Item No. |
Type |
Orientation |
Thickness |
Grade |
Micro Defect Density |
Surface |
Usable area |
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N-Type |
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PAM-FS-GaN50-N |
2″ N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN45-N |
dia.45mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN40-N |
dia.40mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN38-N |
dia.38mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN25-N |
dia.25.4mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN15-N |
14mm*15mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN10-N |
10mm*10.5mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN5-N |
5mm*5.5mm, N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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SEMI-INSULATING |
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PAM-FS-GaN50-SI |
2″ N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN45-SI |
dia.45mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN40-SI |
dia.40mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN38-SI |
dia.38mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN25-SI |
dia.25.4mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN15-SI |
14mm*15mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN10-SI |
10mm*10.5mm,N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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PAM-FS-GaN5-SI |
5mm*5.5mm, N type |
0°±0.5° |
300±25um |
A/B |
0/<2/cm2 |
P/P or P/L |
>90% |
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Gallium Nitride Template,AlN template,InGaN template,AlGaN template |
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Item No. |
Type |
Orientation |
Thickness |
Grade |
Dislocation Density |
Surface |
Usable area |
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PAM-76-GaN-T-N |
GaN template,N type |
0°±0.5° |
20/30/40um |
/ |
<1×10^8/cm2 |
P/P or P/L |
>90% |
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PAM-50-GaN-T-N |
GaN template,N type |
0°±0.5° |
20/30/40um |
/ |
<1×10^8/cm2 |
P/P or P/L |
>90% |
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PAM-50-GaN-T-P |
GaN template,P type |
0°±0.5° |
2um |
/ |
/ |
P/P or P/L |
>91% |
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PAM-50-GaN-T-SI |
GaN template,Semi-insulating |
0°±0.5° |
30/90um |
/ |
<1×10^8/cm2 |
P/P or P/L |
>90% |
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PAM-50-AlN-T-SI |
AlN template,Semi-insulating |
0°±0.5° |
1um |
/ |
/ |
P/P or P/L |
>90% |
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PAM-50-INGaN-T-SI |
InGaN template |
0°±0.5° |
100-200nm |
/ |
10^8/cm2 |
P/P or P/L |
>90% |
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PAM-50-AlGaN-T-SI |
AlGaN template |
0°±0.5° |
1-5um |
/ |
* |
P/P or P/L |
>90% |
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Gallium Nitride Epi Wafer (LED Wafer) |
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Item No. |
Type |
Orientation |
Thickness |
Grade |
Wavelength |
Surface |
Usable area |
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N-Type |
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PAM-50-GaN-EPI- BLUE-F |
/ |
0°±0.5° |
436um |
/ |
445-475nm |
P/L |
>90% |
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PAM-50-GaN-EPI-BLUE-PSS |
/ |
0°±0.5° |
436um |
/ |
445-475nm |
P/L |
>90% |
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PAM-50-GaN-EPI-GREEN-F |
/ |
0°±0.5° |
436um |
/ |
510-530nm |
P/L |
>90% |
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PAM-50-GaN-EPI-GREEN-PSS |
/ |
0°±0.5° |
436um |
/ |
510-530nm |
P/L |
>90% |
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Gallium Nitride UV LED |
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Item No. |
PKG |
Output Power |
Forward Voltage |
Grade |
Wavelength |
Deg. |
FWHM |
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PAM-GaN-LED-UV-265 |
03WG/SMD/TO39 |
/ |
/ |
/ |
265nm+/-3nm |
/ |
10nm |
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PAM-GaN-LED-UV-280 |
03WG/SMD/TO39 |
/ |
6.8-7.5 |
/ |
280nm+/-3nm |
140/60 |
10nm |
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PAM-GaN-LED-UV-310 |
03WG/SMD/TO39 |
/ |
6.5-7.2 |
/ |
310nm+/-3nm |
140/60 |
10nm |
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As a GaN wafer supplier,we offer gallium semiconductor list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.