PAM XIAMEN offers 6″ FZ Silicon Wafer-8
Diameter: 150 mm
N type
Orientation: (100)
Thickness: 675±10μm
Resistivity 6,000-10,000Ωcm
Double Side Polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
Abstract
Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the [...]
MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
90
n- Si:P
41±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
18
n- Si:P
5±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
96
n- Si:P
30±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
21±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
16 ±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
20±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
135
n- Si:P
35±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
140
n- Si:P
31±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
38±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
25±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
150
n- Si:P
44±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
158
n- Si:P
67±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
8
n- Si:P
0.63±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
0.07±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
30
n- Si:P
6.75±10%
n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
75
n- Si:P
40±10%
n/n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
25
n- Si:P
2.5±10%
n/n/n+
For [...]
2019-03-08meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
7-11
SEMI Prime
n-type Si:P
[100]
4″
224
P/E
5-10
SEMI Flats (two), Cassette of 12 + 13 wafers
n-type Si:P
[100]
4″
224
BROKEN
5-10
SEMI Test
n-type Si:P
[100]
4″
500
P/P
4-6
SEMI Prime
n-type Si:P
[100]
4″
350 ±10
P/P
3-5
SEMI Prime
n-type Si:P
[100]
4″
350
P/P
3-5
SEMI Test, Haze, pits, scratches
n-type Si:P
[100]
4″
450
C/C
3-5
SEMI Prime
n-type Si:P
[100]
4″
525
P/P
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
500 ±10
P/P
2-5
SEMI TEST (wafers have spots resembling water splashes, [...]
2019-03-05meta-author
This standard specifies the test method for the dislocation density of germanium single crystal. This standard method is applicable to the measurement of dislocation density of monocrystal germanium on {111), {100} and {113} planes. The test range is 0cm-2~100000cm-2.
1. Normative Document Citation for Determining [...]
2021-11-02meta-author