P-type GaAs Substrates

P-type GaAs Substrates

PAM-XIAMEN can offer 2&3 inches P-type GaAs substrates. Gallium arsenide (GaAs) is a III-V type direct band gap semiconductor with a zinc blend crystal structure, and GaAs p-type dopant is commonly used as a substrate for epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide, etc.The parameters are shown in the table below:

1. Specification of 2 inch p-type GaAs substrates

PAM-190308-GAAS

ParameterCustomer’s RequirementsGuaranteed/Actual ValuesUOM
Growth Method:VGFVGF
Conduct Type:S-C-PS-C-P
Dopant:GaAs-ZnGaAs-Zn
Diameter:50.8±0.450.8±0.4mm
Orientation:(100)0°±0.5°(100)0°±0.5°
OF location/length:EJ[0-1-1]±0.5°/16±1EJ|0-1-1]±0.5°/16±1
lF location/length:EJ[0-11]±0.5°/7±1EJ[0-11]±0.5°/7±1
lngot CC:Min:1E19Max:5E19Min:1.5E19Max:2.0E19/cm
Resistivity:NANAOhm.cm
Mobility:NIANAcm2/vs
EPD:Max:5000Min:900Max: 1100/cm2
Thickness:350±25350±25μm
TTV:Max:10Max:10μm
TIR:Max:10Max: 10μm
Max:Max:10Max:10μm
Warp:Max: 10Max: 10μm
Surface-Finish-front:PolishedPolisbed
Surface-Finish-back:EtchedEtched
Epi-Ready:YesYes

 

2. Specification of 3 inch p-type GaAs substrates

PAM-190315-GAAS

Sr. No.ParameterSpecification
1.Type of semiconductorp-type (Zn or C doped),
VGF grown
2.Diameter76.2+/-0.5 mm
3.Orientation(100)±0.1°(may or may not be 2 degree off )
4.Thickness500± 25um
5.Carrier density0.5 to 5x 10E19/cc
6.Corresponding Sheet resistanceOhm/square
7.EPD≤5000 cm2
8.Primary Flatus(0-1-1)±0.2 degree/EJ
9.Major Flat Length22±2mm
10.Minor Flat Length11±2mm
11.Flat Orientation tolerance±0.02 degree
12.Surface finishPolished one side
13.Laser MarkBack surface along major flat
14.PackingIndividually Packed in inert atmosphere
15.Test reportYes

 

After Si, GaAs is a new type of semiconductor material with the deepest research and the most widely used. It has the characteristics of high mobility, large forbidden band width and high temperature resistance. The p-type conductivity GaAs substrates are mainly used in the fields of high-frequency communications, wireless networks and optoelectronics. With the development of process technology p-type gaas ohmic contact, the gallium arsenide substrates produced are getting larger in size, with a high geometric accuracy and a high surface quality.

For more information, please contact us email at [email protected] and [email protected].

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