PAM XIAMEN offers SrLaAlO4 crystal.
SrLaAlO4 crystal is a promising substrate material for high Tc superconduct film and other oxide films to replace SrTiO3 crystal with better quality and lower cost. We produces SrLaAlO4 crystal and substrate in house up to 35 mm. We [...]
2019-05-14meta-author
An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample [...]
PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure:
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author
There are three basic types of semiconductor materials: intrinsic semiconductors, extrinsic semiconductors, also known as impurity semiconductors. Both types of semiconductor materials can be supplied by PAM-XIAMEN.
1. What Is Intrinsic Semiconductor?
Intrinsic semiconductor refers to a pure semiconductor that is completely free of impurities and [...]
2022-06-20meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
1″
475 ±10
E/E
FZ >500 {1,900-2,400}
n-type Si:P
[111] ±0.5°
1″
280
P/P
FZ 2,000-10,000
TTV<5μm
Intrinsic Si:-
[100]
1″
320
P/E
FZ >20,000
Prime
Intrinsic Si:-
[100]
1″
500
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
1″
160
P/P
FZ >10,000
Prime, TTV<8μm
Intrinsic Si:-
[100]
0.5″
12700
C/C
FZ >10,000
a set of 4 rods sealed in polyehtylene foil
Intrinsic Si:-
[111] ±0.5°
1″
500
P/P
FZ >15,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
1″
1000
P/E
FZ 14,000-30,000
Cassettes of 7, 6, 6 wafers
Intrinsic Si:-
[111] ±2°
1″
27870
C/C
FZ >10,000
Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm
p-type [...]
2019-03-08meta-author
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author