P Type GaN Template

P Type GaN Template
PAM-XIAMEN Offers p type GaN Template
Published on December,27, 2012
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template.
“Now we can offer wide range nitirde semiconductor materials,including GaN, InGaN, InN, and AlN epi wafer with a wide range of deposition rates, various type: n type, p type and semi-insulating, various doping levels, wide composition ranges, and low defect densities, to meet our various customer’s requests,including researcher and device foundry”,said Victor Chan, a senior marketing manager for the company.
The Product
New substrates consist of an  p-GaN layer deposited on 2-inch GaN/sapphire template.
Crystal Structure:
p-GaN  >=2um
u-GaN   >=2um
Buffer layer:-
Sapphire  430um
About Xiamen Powerway Advanced Material Co., Ltd
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
In 2001,PAM-XIAMEN has been involved in GaN material research.PAM-XIAMEN now offer  GaN, InGaN, InN, and AlN epitaxial products with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities.

If you need more information about p-GaN wafer, please visit: https://www.powerwaywafer.com/GaN-Templates.html

For more information, please visit our website:www.powerwaywafer.com, send us email a sales@powerwaywafer.com  or powerwaymaterial@gmail.com.

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