PAM-XIAMEN Offers InGaAs/InAlAs Material
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InAlAs and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to offer InAlAs layer to our customers including many who are developing better and more reliable for broadband quantum cascade lasers. Our InAlAs layer has excellent properties, Aluminium indium arsenide is used e.g. as a buffer layer in metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel. It can be also used to form alternate layers with indium gallium arsenide, which act as quantum wells; these structures are used in e.g. broadband quantum cascade lasers. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InAlAs layer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.”
PAM-XIAMEN’s improved InGaAs/InAlAs product line has benefited from strong tech. support from Native University and Laboratory Center.
Now it shows examples as follows:
Item 1: InGaAs/InAlAs epi-layer on InP substrate (PAM180520-INALAS)
electron carrier conc = 1.3xE12 cm-2
electron mobility = 10400 cm2/Vs
Item 2: Epitaxial InGaAs/InAlAs on Si
n++InGaAs (~30nm) (5X10^19cm^-3,
InP (undoped) (~3~5nm),
In0.7Ga0.3As (undoped) (3nm),
InAs (undoped) (2nm)
In0.53Ga0.47As (undoped) (5nm),
In0.52Al0.48As (undoped) (~15nm),
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a largerbandgap. The x in the formula above is a number between 0 and 1 – this indicates an arbitrary alloy between InAs and AlAs.The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio.Aluminium indium arsenide is used e.g. as a buffer layer in metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel. It can be also used to form alternate layers with indium gallium arsenide, which act as quantum wells; these structures are used in e.g. broadband quantum cascade lasers.
Q: How about the III-V on Si? I am still interested. Can you introduce the buffer layer between Si substrate and III-V active layers?
A: Silicon epitaxial nucleation needs, usually the first low-temperature nucleation InP layer or AlInAs layer, high-temperature annealing after the official growth structure layer.
The nucleation can be very thin transition layer, in a thickness of 10nm-20nm.
Despite the success of nuclear transition, still can not release stress, need to do the test, the material after the growth is still great stress!
Q: The 3rd structure is slightly different from that required, kindly please confirm the delta doping in InAlAs is In0.52Al0.48As.
A: The delta doping in InAlAs should be similar with that you stated, we do not have equipment to test it, but could reach the carrier concentration.