1.Specifications of InGaAs/InAlAs Epitaxy Wafer

PAM XIAMEN offers indium gallium arsenide (InGaAs) epi layer on semi-insulating InP substrate by MOCVD deposition. InGaAs is a light-sensitive material, and its response band can be adjusted by adjusting the value of In component x to obtain a response of 0.87~3.5um. The working band of [...]
PAM XIAMEN offers KBr Potassium Bromide Crystal Substrate. To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote. Main parameters Crystal structure M3 Growth method crystallization process Crystal lattice parameters a=5.596Å Density 2.75(g/cm3) Index of refraction 1.49025 Surface roughness < 5 [...]
PAM XIAMEN offers Si+SiO2+Pt Thin Film. Si+SiO2+Pt Thin Film SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm) Silicon Wafer Specifications: Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm) Resistivity: [...]
Phosphorus-containing III-V compounds are the preferred materials for millimeter-wave and submillimeter-wave devices and circuits, optoelectronic devices, and solar cells. InGaP lattice matched to GaAs has a direct band gap of 1.9eV at room temperature, which is a highly efficient light-emitting material. We are pleased [...]
PAM XIAMEN offers SBN crystal. Strontium-Barium Niobate (SrxBa(1-x)Nb2O6) SBN crystal is an excellent optical and photorefractive material due to its excellent photorefractive, electro-optic, nonlinear optic, and dielectric properties. SBN crystal has a very large electro-optic coefficient up to 1400 pm/V. and is potential crystal [...]
Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted [...]