PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer
| Description | |||||||
| Growth Method | — | MCZ | |||||
| Single crystal size | inch | 2 – 8 | |||||
| Conductivity Type | — | N | P | ||||
| Doped elements | — | P/Sb | B | ||||
| Crystal Orientation | — | <111> | <110> | <100> | <111> | <110> | <100> |
| Resistivity | Ω.cm | 0.0015-100 | 0.001-100 | ||||
| RRG | % | 20 | 20 | ||||
| Oxygen Concentration | atoms/cm3 | 1.00E+18 | 1.00E+18 | ||||
| Carbon Concentration | atoms/cm3 | 5.00E+16 | 5.00E+16 | ||||
| Diameter | mm | 55-157 | 55-157 | ||||
| Length | mm | 50-500 | 50-500 | ||||
| Dislocation | EA/cm2 | N/A | N/A | ||||
| Swirl(After Oxidation) | — | N/A | N/A | ||||
| Remarks：The above parameters can be customized. | |||||||
1″ FZ Silicon Ingot with Diameter 25mm
2″ FZ Silicon Ingot with Diameter 50mm
3″ FZ Silicon Ingot with Diameter 76mm
4″ FZ Silicon Ingot with Diameter 100.7±0.3mm
6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ
silicon ingot with FZ Intrinsic undoped, MCC lifetime more than 1000Ωcm
Size and distribution of Te inclusions in detector-grade CdZnTe ingots
4″ FZ Intrinsic undoped Silicon Ignot-2
FZ Silicon Ignot Diameter 80+1mm-2
FZ Silicon Ignot Diameter 60+1mm-2
FZ Silicon Ignot Diameter 80+1mm-1
FZ Silicon Ignot Diameter 60+1mm-1
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.