PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer:

Description
Growth Method	—	MCZ
Single crystal size	inch	2 – 8
Conductivity Type	—	N			P
Doped elements	—	P/Sb			B
Crystal Orientation	—	<111>	<110>	<100>	<111>	<110>	<100>
Resistivity	Ω.cm	0.0015-100			0.001-100
RRG	%	20			20
Oxygen Concentration	atoms/cm3	1.00E+18			1.00E+18
Carbon Concentration	atoms/cm3	5.00E+16			5.00E+16
Diameter	mm	55-157			55-157
Length	mm	50-500			50-500
Dislocation	EA/cm2	N/A			N/A
Swirl(After Oxidation)	—	N/A			N/A
Remarks：The above parameters can be customized.

 

FAQ about MCZ Silicon Wafers

Q：This is just a curiosity, but let me ask about the production method of your MCZ ingots.
I think there are 3 methods for MCZ growth, but which one(s) does your factory adopt?

1. Longitudinal Magnetic Field Method (A magnetic field created by an electromagnet is applied perpendicularly to the melted silicon surface.)
2. Transverse Magnetic Field Method (A magnetic field created by an electromagnet is applied parallel to the melted silicon surface.)
3. Cusp Magnetic Field Method (A pair of electromagnets are placed on top and bottom to create magnetic fields in opposite directions.)

And, I am asking this also just for a curiosity because our customer requires MCZ silicon ingots, but could it also possible to meet all the required specs simply with CZ?
Or does it have to be MCZ to meet the specs?

A：We grow MCZ monocrystalline silicon ingots with Transverse Magnetic Field Method.
Magnetic Field will improve the resistivity uniformity (RRV), some customers specify MCZ if they’re strict on RRV.
Other parameters are not different with CZ

For more details about the MCZ method please read https://www.powerwaywafer.com/magnetic-czochralski.html.

 

1″ FZ Silicon Ingot with Diameter 25mm

2″ FZ Silicon Ingot with Diameter 50mm

3″ FZ Silicon Ingot with Diameter 76mm

4″ FZ Silicon Ingot with Diameter 100.7±0.3mm

6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ

80+1mm FZ Si Ingot

80+1mm FZ Si Ingot-1

80+1mm FZ Si Ingot-2

80+1mm FZ Si Ingot-3

80+1mm FZ Si Ingot-4

80+1mm FZ Si Ingot-5

60+1mm FZ Si Ingot -1

60+1mm FZ Si Ingot -2

60+1mm FZ Si Ingot -3

60+1mm FZ Si Ingot -4

60+1mm FZ Si Ingot -5

60+1mm FZ Si Ingot -6

Silicon Ingot

silicon ingot with FZ Intrinsic undoped, MCC lifetime more than 1000Ωcm

Silicon Ingots-8

Silicon Ingots-7

Silicon Ingots-6

Silicon Ingots-5

Silicon Ingots-4

Silicon Ingots-3

Silicon Ingots-2

Silicon Ingots-1

Silicon Ingots -2

Silicon Ingots -1

Size and distribution of Te inclusions in detector-grade CdZnTe ingots

4″ FZ Silicon Ignot-4

4″ FZ Intrinsic undoped Silicon Ignot-2

4″FZ Silicon Ignot-3

4″FZ Silicon Ignot-2

FZ Silicon Ignot Diameter 80+1mm-2

FZ Silicon Ignot Diameter 60+1mm-2

FZ Silicon Ignot Diameter 80+1mm-1

FZ Silicon Ignot Diameter 60+1mm-1

6″ FZ Silicon Ignot

6″ Silicon Ignot

4″ FZ Silicon Ignot

4″ Silicon Ignot

Silicon Wafer

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.