Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.

Source: Optics Communications

If you need more information about Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected].

2013-11-19 LT-GaAs, Nd:YVO4, QML

Related Posts

3″ Silicon Wafer-2

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 SEMI TESt n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 10,000-12,000 SEMI Prime, Lifetime>1,500μs n-type Si:P [111] ±0.5° 3″ 415 ±15 BROKEN FZ 10,000-12,000 Broken E/E wafers, in two pieces, Lifetime>1,500μs, n-type Si:P [111] ±0.5° 3″ 2500 C/C FZ 7,000-13,000 SEMI, Individual cst n-type Si:P [111] ±0.5° 3″ 370 P/E FZ >5,000 SEMI [...]

2019-03-06meta-author

2″ Silicon Wafer-8

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Prime, n-type Si:P [111] 2″ 500 P/E 2.2-3.8 SEMI Prime, n-type Si:P [111] 2″ 300 P/E 1-10 SEMI Prime, , TTV<5μm n-type Si:P [111] 2″ 500 P/E 1-10 SEMI Prime, n-type Si:P [111] ±0.5° 2″ 6000 P/E 1-10 SEMI Prime, Individual cst n-type Si:Sb [111] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, n-type Si:Sb [111-3.5°] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, , in hard cassettes of 5 & 8 wafers n-type Si:Sb [111] 2″ 2900 P/P 0.013-0.015 Prime, NO Flats, Individual cst n-type Si:Sb [111-2.5°] ±0.5° 2″ 280 P/E 0.012-0.017 SEMI, n-type Si:As [111] ±0.5° 2″ 279 P/E 0.001-0.005 SEMI Prime p-type [...]

2019-03-07meta-author

785nm laser diode wafers

PAM XIAMEN offers 785nm laser diode wafers. 785nm LD structures P+ GaAs P>5E19, d=0.15μm P- AlGaAs and undoped AlGaAs d~1.5μm Undoped AlGaInAs QW PL:770+-5nm Undoped AlGaAs and N- AlGaAs , d~1.5μm N GaAs buffer N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 15°off <111>A For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

2019-03-13meta-author

Ti: Sapphire Crystal

PAM XIAMEN offers Ti: Sapphire Crystal Ti: Sapphire Crystal Ti Sapphire Crystal Introduction Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm. This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers, mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]

2019-07-24meta-author

6″ Prime Silicon Wafer Thickness 1mm

PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 1mm. 6” Silicon wafer Wafer Size : 6 inch Silicon Thickness : 1mm One side polishing Axial direction : <100> Type : P resistivity:1-100Ωcm no requirement for Particle For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-07-01meta-author

Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding

Helium implantation-induced layer splitting of InP in combination with direct wafer bonding was utilized to achieve low temperature layer transfer of InP onto Si(1 0 0) substrates. InP(1 0 0) wafers with 4 inch diameter were implanted by 100 keV helium ions with a dose of 5 × 1016 cm−2. Then [...]

2019-12-09meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.