Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study
Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° [...]
The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
2020-01-20meta-author
By analyzing the MOSFET, it is known that the switch can be realized by controlling the change of the PN junction.
Field effect transistor
Type
Name
Principle
FET
JFET
Junction
PN junction
MOSFET
Metal oxide semiconductor
MESFET
Metal semiconductor
Schottky junction
MODFET
Modulation doping
HEMT
High electron mobility
In fact, a Schottky junction can be realized through another structure.
Definitions of Junctions
Starting from [...]
2021-04-02meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
10×10 mm substrates [...]
2019-05-15meta-author
Freestanding GaN , Wafer Specification
https://www.powerwaywafer.com/freestadning-gan-substrate.html
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]
2019-03-20meta-author
Al2O3 (Sapphire)
PAM XIAMEN offers high-quality Al2O3 (Sapphire) with C-Plane (0001) orientation at different size from 5 x 5mm2 to 4”diameter:
1 square Al2O3 substrate 5x5mm,10x10mm&0.25″x0.25″
Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp – ALC=> PAM
Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 2sp – ALC=> PAM
Al2O3- Sapphire Wafer, [...]
2019-04-16meta-author