PBTE SINGLE CRYSTAL, LEAD TELLURIDE CRYSTAL

PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal.

Technical specifications:
Melting point: 924°C (1,695 °F; 1,197 K)
Lattice constant: a = 6.46 Angstroms
Solubility in water: insoluble
Band gap: 0.25 eV (0 K)
0.32 eV (300 K)
Electron Mobility: 1600 cm2 V−1 s−1 (0 K)
6000 cm2 V−1 s−1 (300 K)
Crystal structure: Halite (cubic)
Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm.
Customization sizes and shape are available upon request.
Description:
Lead Telluride crystallizes in the NaCl crystal structure with Pb atoms occupying the cation and Te forming the anionic lattice. It is a narrow gap semiconductor with a band gap of 0.32 eV.It also occurs naturally, which is called mineral Altaite.

PbTe has proven to be a very important intermediate thermoelectric material.

In addition, PbTe is also often alloyed with tin to make lead tin telluride, which is used as an infrared detector material.

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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