Veeco MBE reactor for laser diodes
IPG Photonics adds 4th Veeco MBE reactor for laser diodes
Aug 29, 2012
The tool will be used to manufacture gallium arsenide based devices
Veeco Instruments has recently completed installation of a GEN2000 Edge MBE system at IPG Photonics Corporation.
The system was delivered to [...]
2012-08-30meta-author
PAM XIAMEN offers SiO2+Si3N4 on Si wafer.
300 nm SiO2+50nm Si3N4 Films on Si (100), 2″ dia x 0.250 mm t, P type , B-doped R:0.01-0.1ohm.cm
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2(300nm)+50nm Si3N4 layer on 2″ Silicon wafer( [...]
2019-05-16meta-author
PAM XIAMEN offers GaSb Gallium Antimonide Crystal Substrates.
Main Parameters
Single crystal
Dopant
Conductivity [...]
2019-03-12meta-author
Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector
Near-infrared reflectance spectra of 5 μm thick low-temperature (LT) GaAs films on GaAs/AlAs Bragg reflectors (BRs) have been studied by model calculations as a function of the linear absorption coefficient of the films αf. [...]
Highly-quality GaN films were deposited on graphite substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at low temperature. The influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), scanning electron [...]
PAM XIAMEN offers GaN on Si for Power, D-mode.
1.1 D-MODE GaN HEMT Structure on Silicon
Wafer size
2″, 4″, 6″,8″
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
>9E12 cm2
Hall mobility
/
Sheet Resistivity
/
AFM RMS (nm）of 5x5um2
<0.25nm
Bow(um)
<=30um
Edge exclusion
<5mm
SiN passivation layer
0~5nm
u-GaN cap layer
2nm
Al composition
20-30%
AlGaN barrier layer
/
GaN channel
/
AlGaN buffer
/
AlN
/
Substrate material
Silicon substrate
Si wafer thickness (μm)
675um(2″), [...]
2019-05-17meta-author
