Study of Highly Pixelated CdZnTe Detector for PET Applications

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4″ Silicon Wafer-4

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [112-5° towards[11-1]] ±0.5° 4″ 765 P/P FZ ~100 SEMI Prime, TTV<3μm n-type Si:P [112-5° towards[11-1]] ±0.5° 4″ 795 E/E FZ >100 SEMI, in Empak, TTV<4μm, Lifetime>2,000μs Intrinsic Si:- [110] 4″ 500 P/P FZ >20,000 SEMI Test (Both sides with defects) @ [111] – Secondary 70.5° CCW from Primary Intrinsic Si:- [110] ±0.5° 4″ 500 P/E FZ >15,000 Prime Intrinsic Si:- [100] 4″ 500 P/P FZ >30,000 SEMI Prime, TTV<1μm Intrinsic Si:- [100] 4″ 500 P/P FZ >30,000 SEMI Prime, TTV<2μm, Groups of 5 wafers Intrinsic Si:- [100] 4″ 500 P/P FZ >30,000 SEMI Prime, TTV<5μm Intrinsic Si:- [100] 4″ 350 P/P FZ >20,000 Prime, TTV<5μm Intrinsic Si:- [100] 4″ 350 P/P FZ >20,000 Prime, [...]

2019-03-05meta-author

5″ Silicon Wafer

PAM XIAMEN offers 5″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 5″ 635 ±15 E/E FZ >5,000 p-type Si:B [100] 5″ 889 ±13 P/E FZ >1,000 Prime p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 Warp measured <8μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers n-type Si:P [111] ±0.1° 5″ 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces n-type Si:P [111] 5″ 300 ±15 P/E FZ 1,000-3,000 SEMI Prime, in [...]

2019-03-05meta-author

Photographic plate

PAM XIAMEN offers Photographic Plate. Accuracy Index (Standard Size:430mmx430mm) Min.Line/Space Width 20μm/20μm CD Control ±2.0μm Total Pitch Accuracy ±5.0μm Registration Accuracy ±4.0μm Overlay Accuracy 4.0μm Orthogonality 4.0μrad Chrome Plate Material Substrate Material Soda Lime Glass Max. Size 24″×32″ Normal Size 5″x5″,20″x24″,22″x26″,24″x28″ Thickness 5.0mm±0.2mm Film Type Emulsion Optical Density(λ=450nm) ≥3.6 Main application areas: Mainly used in PCB, IC load board and IC Lead Frame and other industries For more information, please visit our website: https://www.powerwaywafer.com,send us email [...]

2019-07-04meta-author

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in [...]

2013-04-24meta-author

Growth of GaAsSb / InGaAs Type-II Superlattice

GaAsSb / InGaAs / InP heterostructure is provided by epi-structure MBE grower PAM-XIAMEN for optical sensor fabrication. The gallium arsenide antimonide (GaAsSb) lattice constant is completely matched with the lattice constant of InP substrate, so it is easy for epitaxial growth on InP substrate [...]

2022-01-18meta-author

AlGaInP epi wafer

AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers. AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. 1.Specs of AlGaInP Wafers on Chips AlGaInP LED Wafer [...]

2014-02-19meta-author AlGaInP epi wafer

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.