PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
765
P/P
FZ ~100
SEMI Prime, TTV<3μm
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
795
E/E
FZ >100
SEMI, in Empak, TTV<4μm, Lifetime>2,000μs
Intrinsic Si:-
[110]
4″
500
P/P
FZ >20,000
SEMI Test (Both sides with defects) @ [111] – Secondary 70.5° CCW from Primary
Intrinsic Si:-
[110] ±0.5°
4″
500
P/E
FZ >15,000
Prime
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<1μm
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<2μm, Groups of 5 wafers
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, [...]
2019-03-05meta-author
PAM XIAMEN offers 5″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
5″
635 ±15
E/E
FZ >5,000
p-type Si:B
[100]
5″
889 ±13
P/E
FZ >1,000
Prime
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
Warp measured <8μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers
n-type Si:P
[111] ±0.1°
5″
200 ±15
BROKEN
FZ >3,000
Broken L/L wafers, in 2 pieces
n-type Si:P
[111]
5″
300 ±15
P/E
FZ 1,000-3,000
SEMI Prime, in [...]
2019-03-05meta-author
PAM XIAMEN offers Photographic Plate.
Accuracy Index (Standard Size:430mmx430mm)
Min.Line/Space Width
20μm/20μm
CD Control
±2.0μm
Total Pitch Accuracy
±5.0μm
Registration Accuracy
±4.0μm
Overlay Accuracy
4.0μm
Orthogonality
4.0μrad
Chrome Plate Material Substrate
Material
Soda Lime Glass
Max. Size
24″×32″
Normal Size
5″x5″,20″x24″,22″x26″,24″x28″
Thickness
5.0mm±0.2mm
Film Type
Emulsion
Optical Density(λ=450nm)
≥3.6
Main application areas:
Mainly used in PCB, IC load board and IC Lead Frame and other industries
For more information, please visit our website: https://www.powerwaywafer.com,send us email [...]
2019-07-04meta-author
Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices
We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in [...]
2013-04-24meta-author
GaAsSb / InGaAs / InP heterostructure is provided by epi-structure MBE grower PAM-XIAMEN for optical sensor fabrication. The gallium arsenide antimonide (GaAsSb) lattice constant is completely matched with the lattice constant of InP substrate, so it is easy for epitaxial growth on InP substrate [...]
2022-01-18meta-author
AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.
1.Specs of AlGaInP Wafers on Chips
AlGaInP LED Wafer [...]