Polished Wafer

FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

  • Description

Product Description

Polished wafer

FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

Our advantages at a glance

1.Advanced epitaxy growth equipment and test equipment.

2.Offer the highest quality with low defect density and good surface roughness.

3.Strong research team support and technology support for our customers

FZ polished wafers Specifications

Type Conduction type Orientation Diameter scope(mm) Resistivity scope(Ω cm) Geometric parameter graininess,surface metal
FZ N&P <100>&<111> 76.2-200 >1000 T≥260(um)              TTV≤2(um)              TIR≤2(um)                      STIR≤1(um)(20*20)                                Graininess≤10pcs(≥0.3um)  ,                                   ≤20pcs(≥0.2um)                    Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cmPoly:5000-12000 A
NTDFZ N <100>&<111> 76.2-200 30-800
CFZ N&P <100>&<111> 76.2-200 1-50
GDFZ N&P <100>&<111> 76.2-200 0.001-300

 

CZ polished wafers Specifications

Type Conduction type Orientation Diameter scope(mm) Resistivity scope(Ω cm) Geometric parameter graininess,surface metal
MCZ N&P <100> <110>&<111> 76.2-200 1-300 T≥260(um)              TTV≤2(um)              TIR≤2(um)                      STIR≤1(um)(20*20)                                Graininess≤10pcs(≥0.3um)  ,                                   ≤20pcs(≥0.2um)                    Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2LTO:3500~8000±250A
CZ N&P <100> <110>&<111> 76.2-200 1-300
MCZ heavily doped N&P  <100>&<111> 76.2-200 0.001-1

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