Silicon-on-insulator (SOI) wafer is one of the most appealing platforms for optical integrated circuit with the potential to realize high performance Ultra Large Scale Integration (ULSI) and device miniaturization. In this work, based on simulations to obtain appropriate optical properties of a porous silicon [...]
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Prime, TTV<1μm
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
SEMI Test, Wafers can be polished for additional fee
n-type Si:P
[111]
4″
1200
P/P
35-85
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
1500
P/E
>20 {24-29}
SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers
n-type Si:P
[111] ±0.5°
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
500
P/P
11-15
SEMI Prime, Both-sides Epi Ready polished
n-type Si:P
[111]
4″
280
P/E
1.3-2.7
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
280
P/E
1.3-2.7
SEMI Prime
n-type [...]
2019-03-05meta-author
The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]
2019-12-23meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
12.5±2.5
p- Si:B
2.35
n/p/p+
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
140±10
n- Si:P
33.6
n/p/p+
3″Øx381μm
n- Si:As[111-4°]
0.001-0.005
P/E
5.5
n- Si:P
0.31 – 0.33
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
37.5
n- Si:P
0.6±10%
n/n+
3″Øx525μm
n- Si:P[111]
0.001-0.005
P/E
4.5
n- Si:P
1.1 – 1.4
n/n+, Sealed in cassettes of 24 wafers
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
5.5
n- Si:P
1.06±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
11
n- Si:P
17.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.7±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
2.1±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.8±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
16±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
13
n- Si:P
1.35±10%
n/n+
3″Øx381μm
n- [...]
2019-03-08meta-author
PAM XIAMEN offers Single crystal SrLaGaO4.
Single crystal SrLaGaO4, (100), 10×9.8×0.5mm 1sp
Single crystal SrLaGaO4, (001), 10x3x0.5mm , one side polished
Single crystal SrLaGaO4, (001), 10x5x0.5mm , one side polished
Single crystal SrLaGaO4, (100), 10x10x0.5mm 2sp
Single crystal SrLaGaO4, (100), 10x3x0.5mm , one side [...]
2019-05-14meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to [...]
2017-11-08meta-author
