Below is the regular standard specification of Polycrystalline back sealed polished wafer, please kindly note in this size, normally notch is used, rather than flat.
Parameter | Unit | PAM210305-SI | |||
Grade | — | Polycrystalline back sealed polished wafer | |||
General Characteristics | — | — | |||
Growth Method | — | CZ | |||
Diameter | mm | 200±0.2 | |||
Type | — | N | |||
Crystal Orientation | — | <100>±0.5 | |||
Dopant | — | AS | |||
Electrical Characteristics | — | — | |||
Resistivity | Ω•cm | 0.002-0.004 | |||
RRG 1 C-1/2R MAX | % | / | |||
RRG 2 C-6mm MAX | % | ≤8 | |||
Life time | msec | / | |||
Chemical Characteristics | — | — | |||
Oxygen | PPMA | / | |||
ORG | % | / | |||
Carbon | PPMA | / | |||
Bulk metal | #/cm3 | / | |||
Surface metal | #/cm2 | ≤5E10(Na,K,Al,Ni,Ca;Cu,Zn,Cr,Fe) | |||
Structural Characteristics | — | — | |||
Dislocation | #/cm2 | None | |||
OISF | #/cm2 | / | |||
Mechanical Characteristics | — | — | |||
Slicing Off Orientation | Degree | 0±0.5 | |||
Primary Flat Location | Degree | NONE | |||
Primary Flat Length | mm | NONE | |||
Secondary Flat Location | Degree | NONE | |||
Secondary Flat Length | mm | NONE | |||
Thickness | mm | 725.0±20.0 | |||
TTV | mm | ≦4 | |||
Bow | mm | ≦50(3PT) | |||
Warp | mm | ≦50(3PT) | |||
TIR | mm | ≦3 | |||
STIR | mm | SFQR ≦0.4(25mm*25mm) | |||
Edge Profile | — | 22±2° X1=70-230µm;X2=500-600µm;X3>0 | |||
Laser Marking | — | NONE | |||
Surface Characteristics | — | — | |||
Front side | Particle | mm | ≦10(≥0.3μm), ≦15(≥0.2μm), ≦50(≥0.16μm) | ||
#/SL | |||||
Backside | BSD | — | NO BSD | ||
Etched | acid | Alkali | — | Etched | |
Polished | — | / | |||
Poly | AP | LP | Å | 8000±800(first) | |
Oxide | AP | LP | Å | 4500±500(next)(WJ1500) | |
Edge Exclusion | mm | <0.6 | |||
Customer Part No. | — | / | |||
Package | — | Standard packing |
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com