Polycrystalline Back Sealed Polished Wafer

Below is the regular standard specification of Polycrystalline back sealed polished wafer, please kindly note in this size, normally notch is used, rather than flat.

Parameter				Unit	PAM210305-SI
Grade				—	Polycrystalline back sealed polished wafer
General Characteristics				—	—
Growth Method				—	CZ
Diameter				mm	200±0.2
Type				—	N
Crystal Orientation				—	<100>±0.5
Dopant				—	AS
Electrical Characteristics				—	—
Resistivity				Ω•cm	0.002-0.004
RRG 1 C-1/2R MAX				%	/
RRG 2 C-6mm MAX				%	≤8
Life time				msec	/
Chemical Characteristics				—	—
Oxygen				PPMA	/
ORG				%	/
Carbon				PPMA	/
Bulk metal				#/cm3	/
Surface metal				#/cm2	≤5E10(Na,K,Al,Ni,Ca;Cu,Zn,Cr,Fe)
Structural Characteristics				—	—
Dislocation				#/cm2	None
OISF				#/cm2	/
Mechanical Characteristics				—	—
Slicing Off Orientation				Degree	0±0.5
Primary Flat Location				Degree	NONE
Primary Flat Length				mm	NONE
Secondary Flat Location				Degree	NONE
Secondary Flat Length				mm	NONE
Thickness				mm	725.0±20.0
TTV				mm	≦4
Bow				mm	≦50（3PT）
Warp				mm	≦50（3PT）
TIR				mm	≦3
STIR				mm	SFQR ≦0.4（25mm*25mm）
Edge Profile				—	22±2° X1=70-230µm；X2=500-600µm;X3>0
Laser Marking				—	NONE
Surface Characteristics				—	—
Front side	Particle			mm	≦10(≥0.3μm), ≦15(≥0.2μm), ≦50(≥0.16μm)
				#/SL
Backside	BSD			—	NO BSD
	Etched	acid	Alkali	—	Etched
	Polished			—	/
	Poly	AP	LP	Å	8000±800（first）
	Oxide	AP	LP	Å	4500±500（next）（WJ1500）
	Edge Exclusion			mm	＜0.6
Customer Part No.				—	/
Package				—	Standard packing

For more information, please contact us email at [email protected] and [email protected]

2021-03-25

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