PAM-XIAMEN, one of leading GaN substrate manufacturers, offers 10*10mm2 N-Type Freestanding GaN Substrate. To get more specific information please see the table below:
1. N-Type Freestanding GaN Substrate Specification
Item
PAM-FS-GAN-50-N
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in [...]
2020-08-17meta-author
PAM XIAMEN offers 5″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
5″
635 ±15
E/E
FZ >5,000
p-type Si:B
[100]
5″
889 ±13
P/E
FZ >1,000
Prime
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
Warp measured <8μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers
n-type Si:P
[111] ±0.1°
5″
200 ±15
BROKEN
FZ >3,000
Broken L/L wafers, in 2 pieces
n-type Si:P
[111]
5″
300 ±15
P/E
FZ 1,000-3,000
SEMI Prime, in [...]
2019-03-05meta-author
PAM XIAMEN offers SrTiO3 STO Strontium Titanate Crystal Substrates.
Main Parameters
Crystal structure
M6
Growth method
Blaze method
Unit cell constant
a=3.905Å
Melt [...]
2019-03-14meta-author
Low Temperature GaAs Test Report
https://www.powerwaywafer.com/low-temperature-gaas-2.html
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]
2019-03-20meta-author
Transmittance of Glass Wafer
Different Glass wafer material has different transmittance. The end user should check their detail application, and then choose corresponding glass wafer material, see below:
Transmission Rate of Jgs1 Glass Wafer
Transmission Rate of Jgs1 Glass Wafer
Transmittance of Glass Wafer
Transmission Rate of Jgs2 Glass [...]
2020-06-18meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
P
Boron
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
P
Boron
FZ
-100
>3000
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/WTOx
76.2
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
76.2
P
Boron
CZ
-100
1-10
825-875
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
850-1000
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
76.2
P
Boron
CZ
-111
1-20
300-350
P/P
PRIME
76.2
P
Boron
CZ
-111
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
>100
275-325
P/P
PRIME
76.2
P
Boron
CZ
-110
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
100-200
800-850
P/P
PRIME
76.2
Any
Any
CZ
Any
Any
250-500
P/E
TEST
76.2
Any
Any
CZ
-100
1-100
330-430
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-100
> 15000
350-400
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-111
> 15000
350-400
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-04meta-author