Below is the regular standard specification of Polycrystalline back sealed polished wafer, please kindly note in this size, normally notch is used, rather than flat.
| Parameter | Unit | PAM210305-SI | |||
| Grade | — | Polycrystalline back sealed polished wafer | |||
| General Characteristics | — | — | |||
| Growth Method | — | CZ | |||
| Diameter | mm | 200±0.2 | |||
| Type | — | N | |||
| Crystal Orientation | — | <100>±0.5 | |||
| Dopant | — | AS | |||
| Electrical Characteristics | — | — | |||
| Resistivity | Ω•cm | 0.002-0.004 | |||
| RRG 1 C-1/2R MAX | % | / | |||
| RRG 2 C-6mm MAX | % | ≤8 | |||
| Life time | msec | / | |||
| Chemical Characteristics | — | — | |||
| Oxygen | PPMA | / | |||
| ORG | % | / | |||
| Carbon | PPMA | / | |||
| Bulk metal | #/cm3 | / | |||
| Surface metal | #/cm2 | ≤5E10(Na,K,Al,Ni,Ca;Cu,Zn,Cr,Fe) | |||
| Structural Characteristics | — | — | |||
| Dislocation | #/cm2 | None | |||
| OISF | #/cm2 | / | |||
| Mechanical Characteristics | — | — | |||
| Slicing Off Orientation | Degree | 0±0.5 | |||
| Primary Flat Location | Degree | NONE | |||
| Primary Flat Length | mm | NONE | |||
| Secondary Flat Location | Degree | NONE | |||
| Secondary Flat Length | mm | NONE | |||
| Thickness | mm | 725.0±20.0 | |||
| TTV | mm | ≦4 | |||
| Bow | mm | ≦50（3PT） | |||
| Warp | mm | ≦50（3PT） | |||
| TIR | mm | ≦3 | |||
| STIR | mm | SFQR ≦0.4（25mm*25mm） | |||
| Edge Profile | — | 22±2° X1=70-230µm；X2=500-600µm;X3>0 | |||
| Laser Marking | — | NONE | |||
| Surface Characteristics | — | — | |||
| Front side | Particle | mm | ≦10(≥0.3μm), ≦15(≥0.2μm), ≦50(≥0.16μm) | ||
| #/SL | |||||
| Backside | BSD | — | NO BSD | ||
| Etched | acid | Alkali | — | Etched | |
| Polished | — | / | |||
| Poly | AP | LP | Å | 8000±800（first） | |
| Oxide | AP | LP | Å | 4500±500（next）（WJ1500） | |
| Edge Exclusion | mm | ＜0.6 | |||
| Customer Part No. | — | / | |||
| Package | — | Standard packing | |||
For more information, please contact us email at [email protected] and [email protected]