The development of solid state physics, inorganic chemistry, organic chemistry, physical chemistry and other disciplines, in-depth research on the structure and physical properties of matter, has promoted the research and understanding of the nature of materials. Therein, semiconductor material is one crucial part of [...]
GaAs epi wafer for microelectronic and optoelectronic devices
PAM XIAMEN offers GaAs epi wafer for microelectronic and optoelectronic devices including MESFET HEMT, ICMMIC HBT, HALL device, visible light LED, IR LED, LD and solar cell.
High level [...]
Phosphorus-containing III-V compounds are the preferred materials for millimeter-wave and submillimeter-wave devices and circuits, optoelectronic devices, and solar cells. InGaP lattice matched to GaAs has a direct band gap of 1.9eV at room temperature, which is a highly efficient light-emitting material. We are pleased [...]
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
This paper investigates the hydrogen plasma treatment effects on the interface of Au/CdZnTe contact. Hydrogen plasma with high energy is the smallest and lightest atomic mass, which is easy to enter into the crystal surface to fill the vacancy defects. The Au/CdZnTe samples were treated [...]
PAM-PA03 series are pixel electrode structured detectors based on CZT crystal.
1. CZT Compton Imaging Detector Specification
Pixel center space
2. Spectrum of CZT Compton Imager
3. Features Compton Imaging Detector Based on CZT Crystal
High energy resolution [...]