PAM XIAMEN offers LD Bare Bar for 808nm@cavity 2mm.
Filling Factor: 38%
Output Power: 100W
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at firstname.lastname@example.org and email@example.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
V-pits on the surface of an InGaN LED (left) scatter light into the device’s active layers, known as quantum wells (QWs – right). Credit: American Chemical Society.
Standard light-emitting diodes (LEDs) used for home lighting can now transmit data more rapidly between electronic devices, thanks [...]
PAM XIAMEN offers Borosilicate Float Glass from SCHOTT. We have a large selection of Schott Borofloat 33 glass wafers in all sizes. We have borofloat glass as thin as 100 microns. Borofloat 33 is the sanme as Pyrex 7740 and has the same anondic [...]
PAM XIAMEN offers Silicon Ingots.
5″Ø×420mm n-type Si:As, Ro=(0.0032-0.0034)Ohmcm
5″Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As, (0.001-0.007)Ohmcm
5″Ø×375mm ingot n-type Si:As, Ro=(0.0021-0.0039)Ohmcm
5″Ø×330mm ingot n-type Si:As, Ro=(0.0022-0.0040)Ohmcm
5″Ø×416mm ingot n-type Si:As, Ro=(0.0024-0.0029)Ohmcm
5″Ø×273mm ingot n-type Si:As, Ro=(0.0024-0.0040)Ohmcm
5″Ø×388mm ingot n-type Si:As, Ro=(0.0029-0.0044)Ohmcm
5″Ø×340mm ingot n-type Si:As, Ro=(0.0032-0.0044)Ohmcm
5″Ø×290mm ingot [...]
PAM-XIAMEN can offer epitaxy wafer of silicon for manufacturing integrated optical waveguide devices. The silicon epi wafer we offer is grown core layer of Si and lower cladding layer of SiO2 on Si substrate and the waveguide structure is ridged. Due to the large [...]