CZT Detector
- Description
Product Description
| 1.1 CZT Planar Detector | |||
| Specifications | |||
| HV | +200 V~ +500 V | ||
| Energy range | 20 KeV ~ 200 KeV | ||
| Operating temperature range | -20℃ ~ 40℃ | ||
| Size（mm 3 ） | 5×5×2 | 10×10×2 | |
| Energy resolution @59.5 KeV | Counter grade | ＞15% | ＞15% |
| Discriminator grade | 7% ~ 15% | 8% ~ 15% | |
| Spectrometer grade | ＜7% | ＜8% | |
| Note | Other sizes can also be available | ||
Standard 5×5×2mm 3 CZT assembly
Standard 10×10×2mm 3 CZT assembly
| 1.2 CZT Pixilated Detector | ||
| Specifications | ||
| Application | SPECT、γ Camera | X-ray imaging |
| Operating temperature range | -20℃ ~ 40℃ | |
| Typical energy resolution | ＜6.5%@59.5 KeV | —— |
| Count rate | —— | ＞2M cps/pixel |
| Typical matrix | Area array detector: 8×8 | Area array detector: 8×8 |
| Linear array detector: 1×16 | Linear array detector: 1×16 | |
| The maximum dimensions of crystal | 40×40×5 mm 3 | |
| Note | Other electrode pattern can also be available | |
Standard 8×8 pixel CZT detector assembly
Standard 8×8 pixel CZT detector assembly
| 1.3 CZT Co-Planar Grid Detectors |
| Specifications |
| HV: +1000 V ~ +3000V |
| Energy range: 50 KeV ~ 3 MeV |
| Operating temperature range：-20℃ ~ 40℃ |
| Typical energy resolution：＜4%@662 KeV |
| Peak-to-Compton ratio: 3 ~ 5 |
| Standard size（mm 3 ）: 10×10×5, 10×10×10 |
| 1.4 CZT Hemispherical Detector | ||
|
HV: +200 V ~ +1000 V |
Operating temperature range：-20℃ ~ 40℃ |
|
| Energy range: 50 KeV ~ 3 MeV | Typical energy resolution：＜3%@662 KeV | |
| Standard size（mm 3 ） ：4×4×2, 5×5×2.5, 10×10×5 | ||
SPCW Wide Range Radiation Doses Module
α/β/γ-ray Differentiation Detector
CZT High Resolution Pixel Detector
CZT Photon Counting Linear Array Detector
Multi-pixel Spectral Imaging Module
CZT Multi-Pixel Photon Counting Module
X-ray Photon Counting Imaging System
CZT High-Density Pixel Detector
Charge Sensitive Pre-amplifier Chip
Charge Sensitive Pre-amplifier
You may also like…
-
Read MoreQuick ViewNanofabrication
PAM-XIAMEN Offers photoresist plate with photoresist
We can offer Nanolithography (photolithography):Surface preparation, Photoresist apply, Soft bake, Alignment, Exposure, Development,Hard bake, Develop inspect, Etch, Photoresist removal(strip), Final inspection. -
Read MoreQuick ViewCdZnTe (CZT) Wafer
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors. -
Read MoreQuick ViewTest Wafer Monitor Wafer Dummy Wafer
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor Wafer
-
Read MoreQuick ViewSiC Epitaxy
We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect -
Read MoreQuick ViewInAs wafer
PAM-XIAMEN offers Compound Semiconductor InAs wafer – Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
-
Read MoreQuick ViewGaAs (Gallium Arsenide) Wafers
PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The resistivity of GaAs wafer depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. the orientation of Gallium Arsenide wafer should be (100) and (111), for (100)orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.
-
Read MoreQuick ViewGe(Germanium) Single Crystals and Wafers
PAM-XIAMEN offers semiconductor materials,single crystal (Ge)Germanium Wafer grown by VGF / LEC -
Read MoreQuick ViewFreestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.