GaN HEMT Epitaxial Wafer

Product Description

2″ GaN HEMT Epitaxial Wafers

We offer 2″ GaN HEMT Wafers, the structure is as follows:

Structure(from top to bottom):

*undoped GaN cap(2~3nm)

AlxGa1-xN (18~40nm)

AlN(buffer layer)

un-doped GaN(2~3um)

Sapphire substrate

* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.

AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

2″,4″ AlGaN/GaN HEMT Epi Wafer on Si

1.1Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GaN)   High Electron Mobility Transistor (HEMT)  on Silicon substrate.

1.2.Epistructure: Crack-free Epilayers

1.3.Electrical Properties of the AlGaN/GaN HEMT structure

2DEG Mobility (at 300 K)                      :≥1,800 cm2/V.s

2DEG Sheet Carrier Density (at 300 K)  :≥0.9×1013 cm-2

RMS Roughness (AFM)                        : ≤ 0.5 nm (5.0 µm × 5.0 µm scan Area)

2″AlGaN/GaN on sapphire

For specification of AlGaN/GaN on sapphire template, please contact our sales department: sales@powerwaywafer.com.

Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

Explanation of AlGaN/Al/GaN HEMTs:

Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.

GaN EpitaxialTechnology—-Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:

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