GaN HEMT Epitaxial Wafer
Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.
- Description
Product Description
4.1 GaN HEMT Material: Available size:2”,4”,6”,8”:
4.2 Now we show you an example as follows:
2″ (50.8mm)GaN HEMT Epitaxial Wafers
We offer 2″(50.8mm) GaN HEMT Wafers, the structure is as follows:
Structure(from top to bottom):
*undoped GaN cap(2~3nm)
AlxGa1-xN (18~40nm)
AlN(buffer layer)
un-doped GaN(2~3um)
Sapphire substrate
* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.
AlGaN/GaN HEMT Epi Wafer on sapphire/GaN
Layer # | Composition | Thickness | X | Dopant | Carrier Concentration |
5 | GaN | 2nm | – | – | – |
4 | AlxGa1–xN | 8nm | 0.26 | – | – |
3 | AlN | 1nm | Un-doped | ||
2 | GaN | ≥1000 nm | Un-doped | ||
1 | Buffer/Transition Layer | – | – | ||
Substrate | Silicon | 350µm/625µm | – |
2″(50.8mm),4″ (100mm)AlGaN/GaN HEMT Epi Wafer on Si
1.1Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon substrate.
Requirements | Specification |
AlGaN/GaN HEMT Epi Wafer on Si | |
AlGaN/GaN HEMT structure | Refer 1.2 |
Substrate Material | Silicon |
Orientation | <111> |
Growth method | Float Zone |
Conduction Type | P or N |
Size (inch) | 2”,4” |
Thickness(μm) | 625 |
Backside | Rough |
Resistivity(Ω-cm) | >6000 |
Bow(μm) | ≤ ±35 |
1.2.Epistructure: Crack-free Epilayers
Layer # | Composition | Thickness | X | Dopant | Carrier Concentration |
5 | GaN | 2nm | – | – | – |
4 | AlxGa1–xN | 8nm | 0.26 | – | – |
3 | AlN | 1nm | Un-doped | ||
2 | GaN | ≥1000 nm | Un-doped | ||
1 | Buffer/Transition Layer | – | – | ||
Substrate | Silicon | 350µm/625µm | – |
1.3.Electrical Properties of the AlGaN/GaN HEMT structure
2DEG Mobility (at 300 K) :≥1,800 cm2/V.s
2DEG Sheet Carrier Density (at 300 K) :≥0.9×1013 cm-2
RMS Roughness (AFM) : ≤ 0.5 nm (5.0 µm × 5.0 µm scan Area)
2″(50.8mm)AlGaN/GaN on sapphire
For specification of AlGaN/GaN on sapphire template, please contact our sales department: sales@powerwaywafer.com.
Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.
Explanation of AlGaN/Al/GaN HEMTs:
Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.
GaN EpitaxialTechnology—-Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:
Related Classification:
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GAN HEMT EPITAXIAL WAFERS (GAN EPI-WAFERS)
4.3 GaN Device:
4.4 Test Characterization Equipment:
Contactless Sheet Resistance
Laser Thin Film Thickness Mapping
High Temp/High Humidity Reverse Bias
Thermal Shock
DIC Nomarski Microscope
Atomic Force Microscope (AFM)
Surface Defectivity Scan
High Temp Reverse Bias
4PP Sheet Resistance
Contactless Hall Mobility
Temperature Cycle
X-ray Diffraction (XRD)/Reflectance (XRR)
Ellipsometer Thickness
Profilometer
CV Tester
4.5 Foundry Fabrication: we also offer foundry fabrication in the following process as follows:
MOCVD Epitaxy
Metal Sputtering/E-Beam
Dry/Wet Metal/Dielectric Etch
Thin Film PECVD/LPCVD/Sputtering
RTA/Furnace Annealing
Photolithography (0.35um min. CD)
Ion Implantation