GaSb Wafer

PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

  • Description

Product Description

PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide grown by LEC(Liquid Encapsulated Czochralski), which can reduce the defects of gallium antimonide. The GaSb wafer is epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. GaSb wafers can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

Here is the detail specification of wafer:

2″(50.8mm)GaSb Wafer Specification

3″(50.8mm)GaSb Wafer Specification

4″(100mm) GaSb Wafer Specification

 

2″ GaSb Wafer Specification

temSpecifications
DopantUndopedZincTellurium
Conduction TypeP-typeP-typeN-type
Wafer Diameter2″
Wafer Orientation(100)±0.5°
Wafer Thickness500±25um
Primary Flat Length16±2mm
Secondary Flat Length8±1mm
Carrier Concentration(1-2)x1017cm-3(5-100)x1017cm-3(1-20)x1017cm-3
Mobility600-700cm2/V.s200-500cm2/V.s2000-3500cm2/V.s
EPD<2×103cm-2
TTV<10um
BOW<10um
WARP<12um
Laser Markingupon request
Suface FinishP/E, P/P
Epi Readyyes
PackageSingle wafer container or cassette

 

 3″ GaSb Wafer Specification

temSpecifications
Conduction TypeP-typeP-typeN-type
DopantUndopedZincTellurium
Wafer Diameter3″
Wafer Orientation(100)±0.5°
Wafer Thickness600±25um
Primary Flat Length22±2mm
Secondary Flat Length11±1mm
Carrier Concentration(1-2)x1017cm-3(5-100)x1017cm-3(1-20)x1017cm-3
Mobility600-700cm2/V.s200-500cm2/V.s2000-3500cm2/V.s
EPD<2×103cm-2
TTV<12um
BOW<12um
WARP<15um
Laser markingupon request
Suface finishP/E, P/P
Epi readyyes
PackageSingle wafer container or cassette

 

4″ GaSb Wafer Specification

temSpecifications
DopantUndopedZincTellurium
Conduction TypeP-typeP-typeN-type
Wafer Diameter4″
Wafer Orientation(100)±0.5°
Wafer Thickness800±25um
Primary Flat Length32.5±2.5mm
Secondary Flat Length18±1mm
Carrier Concentration(1-2)x1017cm-3(5-100)x1017cm-3(1-20)x1017cm-3
Mobility600-700cm2/V.s200-500cm2/V.s2000-3500cm2/V.s
EPD<2×103cm-2
TTV<15um
BOW<15um
WARP<20um
Laser markingupon request
Suface finishP/E, P/P
Epi readyyes
PackageSingle wafer container or cassette

 

1)2″(50.8mm),3″(76.2mm)GaSb wafer

Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth Method:CZ
Polish:SSP

2)2″(50.8mm)GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:N/undoped;P/Te
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500
Growth Method:LEC
Polish:SSP

3)2″(50.8mm)GaSb wafer
Orientation:(111)A±0.5°
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

4)2″(50.8mm)GaSb wafer
Orientation:(111)B±0.5°
Thickness(μm):500±25;450±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

5)2″(50.8mm)GaSb wafer
Orientation:(111)B 2deg.off
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

Relative products:
InAs wafer
InSb wafer
InP wafer
GaAs wafer
GaSb wafer
GaP wafer

Gallium Antimonide (GaSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.

GaSb material presents interesting gallium antimonide properties for single junction thermophotovoltaic (TPV) devices. GaSb: Te single crystal grown with Czochralski (Cz) or modified Czo- chralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the gallium antimonide crystals, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk gallium antimonide crystal growth, the gallium antimonide wafer preparation, and the gallium antimonide wafer etching. Subsequent steps after these are related to the p / no r n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process, we report some material specificity.

We also offer gallium antimonide wafer epi service, take below as an example:

2”size GaSb epi wafer:
Epi layer: Thikness 0.5 um, undoped/p type GaSb epi layer (undoped InP epi layer also available),
Substrate:2” semi-insulating GaAs

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