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  • Photo Mask

    PAM-XIAMEN Offers Photomasks

    A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with…

  • Ge(Germanium) Single Crystals and Wafers

    PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment….

  • InP wafer

    PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including  low dope, N type or semi-insulating. The mobility of InP wafer is different in different type, low doped…

  • InAs wafer

    PAM-XIAMEN offers Compound Semiconductor InAs wafer – indium arsenide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different…

  • InSb wafer

    PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped…

  • GaSb Wafer

    PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)…

  • GaP Wafer – Can’t Offer Temporarily

    PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in…

  • GaAs (Gallium Arsenide) Wafers

    As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor C doped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si…

  • GaAs Epiwafer

    PAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs…

  • Freestanding GaN substrate

    PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low…

  • GaN Templates

    PAM-XIAMEN’s Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire

  • GaN based LED Epitaxial Wafer

    PAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.