PAM XIAMEN offers PbWO4 single crystal substrate.
PbWO4 single crystal substrate ,random orientation, 5 x 3 x 0.45mm,Single side polished
PbWO4 single crystal substrate ,random orientation, 5 x 5 x 0.45mm,Single side polished
PbWO4 (001) single crystal substrate 10x10x0.5mm,2sp
PbWO4 single crystal substrate , [...]
2019-05-14meta-author
The International Technology Roadmap for Semiconductors (ITRS) identifies production test data as an essential element in improving design and technology in the manufacturing process feedback loop. One of the observations made from the high-volume production test data is that dies that fail due to [...]
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm)
FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm)
FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]
2019-03-08meta-author
PAM-XIAMEN can offer FZ neutron transmutation doping (NTD) silicon wafer with a uniform doping concentration and uniform radial resistivity distribution. At present, silicon material is still the most important basic material in the electronic information industry. More than 95% of semiconductor devices and more [...]
2021-06-24meta-author
A template-based vision system for the 100% inspection of wafer die surfaces has been developed. Design goals included a requirement for the detection of flaws as small as two thousandths of an inch on parts up to 8-in. wafer size. Each die is treated [...]
Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To optimize the growth process and to obtain high growth rates, we have investigated the effect of temperature and precursor flow rate on on‐axis Si(100) and off‐axis [...]
2020-01-20meta-author