Effects of sample processing on the performance of CdZnTe crystals
Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal [...]
Silicon Nitride Waveguide – Substrates and Services Provided
PAM XIAMEN offers Silicon Nitride Waveguide
Clients fabricate SiN waveguides using contact lithography and pattern designs with waveguides with widths varying from 0.8 microns to 2.0 microns each of which has a straight reference waveguides and spiral waveguides [...]
2019-02-12meta-author
Transmitance-GaN material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers NdGaO3 Substrate.
NdGaO3 Substrate (011)
NdGaO3 (011) 10x10x0.4 mm, 1 SP
NdGaO3 (011) 10x10x0.5 mm, 1 SP
NdGaO3 (011) 2″ dia x0.5 mm, 1 SP
NdGaO3 substrates(001)
NdGaO3 (001) 5x5x0.5 mm, 1 SP
NdGaO3 (001) 10x10x0.5 mm, 1 SP
NdGaO3 (001) 10x10x0.5 [...]
2019-05-13meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4″ epi CZ P-type (100)±0.5°
Thickness 525±15μm
Resistivity 0.015±0.005Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-06-28meta-author
Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less [...]